DOI: 10.1109/nano.2001.966459
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Abstract: The lnAs/GaAs quantum dot (QD) edge light emitting diode (LED) emitting at a wavelength of 1 pm has been fabricated which exhibits very small wavelength shift of 0.22 nm/K and the full width at half maximum (FWHM) broadening shift of 0.04 nm/K. Detailed temperature characteristics over a range from 20 to 300 K are presented.