Temperature induced low voltage write-once-read-many resistive switching in Ag/BTO/Ag thin films

Effect of long chain fatty acids on the memory switching behavior of tetraindolyl derivatives

“…The device retains its LRS i.e., ON state permanently showing WORM behavior. 81,82 Cross-sectional view of the SEM image of the Au/Indole2-SA/ ITO clearly depicts the presence of Au, ITO as well as Indole2-SA active layer within the device (Fig. 5f) and measured thickness of the active layer was 380 nm.…”