volume 146, issue 1-3, P256-259 2008
DOI: 10.1016/j.mseb.2007.07.076
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Abstract: Electroluminescence (EL) at 1.54 m of reverse biased Si:Er diodes grown by sublimation molecular-beam epitaxy has been investigated as a function of temperature in the range of 80-300 K. An erbium electroluminescence trend versus temperature is shown to be determined by the p-n junction breakdown mechanism: we observe the EL quenching in light emitting diodes (LEDs) exhibiting a tunnel p-n junction breakdown and EL increase with temperature in diodes exhibiting an avalanche one. LEDs exhibiting a mixed p-n ju…

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