Temperature-dependent resistivity of ferromagnetic<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>Ga</mml:mtext></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mtext>Mn</mml:mtext></mml:mrow><mml:mi>x</mml:mi></mml:msub><mml:mtext>As</mml:mtext></mml:mrow></mml:math>: Interplay between impurity scattering and many-body effects

Kyrychenko, F. V.; Ullrich, Carsten A.

doi:10.1103/physrevb.80.205202

Cited by 6 publications

(10 citation statements)

References 35 publications

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“…Once the frequency goes to zero, the static conductivity should more appropriately be calculated using an expression derived from the semiclassical Boltzmann equation. 18 We have investigated this regime before 28 to describe the drop in static resistivity in the ferromagnetic phase.…”

Section: 43mentioning

confidence: 99%

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Response properties of III-V dilute magnetic semiconductors including disorder, dynamical electron-electron interactions, and band structure effects

Kyrychenko

Ullrich

2011

Phys. Rev. B

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A theory of the electronic response in spin and charge disordered media is developed with the particular aim to describe III-V dilute magnetic semiconductors like Ga1−xMnxAs. The theory combines a detailed k · p description of the valence band, in which the itinerant carriers are assumed to reside, with first-principles calculations of disorder contributions using an equation-of-motion approach for the current response function. A fully dynamic treatment of electron-electron interaction is achieved by means of time-dependent density functional theory. It is found that collective excitations within the valence band significantly increase the carrier relaxation rate by providing effective channels for momentum relaxation. This modification of the relaxation rate, however, only has a minor impact on the infrared optical conductivity in Ga1−xMnxAs, which is mostly determined by the details of the valence band structure and found to be in agreement with experiment.

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Section: 43mentioning

confidence: 99%

“…In previous work we used a simplified treatment of the semiconductor valence band 26,27 or considered only static properties of the system. 28 In this paper we simultaneously account for the complexity of the valence band, use a first-principles approach to describe disorder contributions, and employ a fully dynamic treatment of electron interactions.…”

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confidence: 99%

Response properties of III-V dilute magnetic semiconductors including disorder, dynamical electron-electron interactions, and band structure effects

Kyrychenko

Ullrich

2011

Phys. Rev. B

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“…The dependence of T 2 ‫ء‬ on the pump intensity was measured at 8 K ͓Fig. 24,25 The temperature-dependent derivative of resistivity has been ascribed to the dominant scattering occurring from uncorrelated spin fluctuation on the ferromagnetic side to the short-range correlated spin fluctuation on the paramagnetic side when the temperature is close to T c . It is seen that T 2 ‫ء‬ is almost independent of pump intensity for ͑Ga,Mn͒As, i.e., independent of photogenerated carrier density.…”

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confidence: 99%

Electron spin dynamics in heavily Mn-doped (Ga,Mn)As

Zhu

Han

Chen

et al. 2010

Applied Physics Letters

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Electron spin relaxation and related mechanisms in heavily Mn-doped ͑Ga,Mn͒As are studied by performing time-resolved magneto-optical Kerr effect measurements. At low temperature, s-d exchange scattering dominates electron spin relaxation, whereas the Bir-Aronov-Pikus mechanism and Mn impurity scattering play important roles at high temperature. The temperature-dependent spin relaxation time exhibits an anomaly around the Curie temperature ͑T c ͒ that implies that thermal fluctuation is suppressed by short-range correlated spin fluctuation above T c .

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“…8 Another previous work investigated, among other issues, properties of Hartree-Fock solutions of the two-component carrier system consisting of heavy and light holes. 9 Moreover, very recently Kyrychenko and Ullrich have put forward a study of holes in magnetically doped III-V systems 10 by modeling the band structure by an 8 × 8 k · p Hamiltonian (similar to the present work) while disorder effects and interaction among the carriers are treated by a combination of equations-of-motion techniques and time-dependent density-functional theory. 10,11 Further below we will compare our fairly analytical results with the ones of Ref.…”

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confidence: 99%

Dielectric function of the semiconductor hole liquid: Full frequency and wave-vector dependence

Schliemann

2011

Phys. Rev. B

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We study the dielectric function of the homogeneous semiconductor hole liquid of p-doped bulk III-V zinc-blende semiconductors within random-phase approximation. The single-particle physics of the hole system is modeled by Luttinger's four-band Hamiltonian in its spherical approximation. Regarding the Coulomb-interacting hole liquid, the full dependence of the zero-temperature dielectric function on wave vector and frequency is explored. The imaginary part of the dielectric function is analytically obtained in terms of complicated but fully elementary expressions, while in the result for the real part nonelementary one-dimensional integrations remain to be performed. The correctness of these two independent calculations is checked via Kramers-Kronig relations. The mass difference between heavy and light holes, along with variations in the background dielectric constant, leads to dramatic alternations in the plasmon excitation pattern, and, generically, two plasmon branches can be identified. These findings are the result of the evaluation of the full dielectric function and are not accessible via a high-frequency expansion. In the static limit a beating of Friedel oscillations between the Fermi wave numbers of heavy and light holes occurs.

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Temperature-dependent resistivity of ferromagneticGa1−xMnxAs: Interplay between impurity scattering and many-body effects

Cited by 6 publications

References 35 publications

Response properties of III-V dilute magnetic semiconductors including disorder, dynamical electron-electron interactions, and band structure effects

Response properties of III-V dilute magnetic semiconductors including disorder, dynamical electron-electron interactions, and band structure effects

Electron spin dynamics in heavily Mn-doped (Ga,Mn)As

Dielectric function of the semiconductor hole liquid: Full frequency and wave-vector dependence

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