Temperature dependent electron transport properties of degenerate SnO2 thin films

Boyalı, E.; Baran, Veysel; Asar, T.; Özçelik, Sadık; Kasap, M.

doi:10.1016/j.jallcom.2016.09.011

Cited by 15 publications

(11 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Then, we may consider that mobility (µ) is dominated by grain boundary scattering, and neglect bulk scattering mechanisms (phonon and ionized impurity). It is important to mention that this situation is different from a recent study by Boyalı and coworkers [31], who concluded that electron-electron scattering is dominating at low temperatures while the electron-phonon scattering is the dominant mechanism at high temperatures. In that case, samples were deposited by magnetron sputtering, which leads to larger grains, and the free electron concentration is associated to a completely degenerate semiconductor.…”

Section: Electrical Characterization Through Decay Of Photo-induced Ccontrasting

confidence: 73%

Electron trapping in the photo-induced conductivity decay in GaAs/SnO2 heterostructure

Bueno

Scalvi

2018

Appl. Phys. A

View full text Add to dashboard Cite

The decay of photo-induced conductivity is measured for GaAs/SnO 2 heterostructure, after illumination with appropriate wavelength. The top oxide layer is deposited by sol-gel-dip-coating and doped with Eu 3+ , and the GaAs bottom layer is deposited by resistive evaporation. It shows quite unusual behavior since the decay rate gets slower as the temperature is raised. The trapping by intrabandgap defects in the SnO 2 top layer is expected, but a GaAs/SnO 2 interface arrest becomes also evident, mainly for temperatures below 100 K. Concerning the SnO 2 layer, trapping by different defects is possible, due to the observed distinct capture time range. Besides Eu 3+ centers and oxygen vacancies, this sort of heterostructure also leads to Eu 3+ agglomerate areas in the SnO 2 top layer surface, which may contribute for electron scattering. The electrical behavior reported here aims to contribute for the understanding of the electrical transport mechanisms which, combined with emission from Eu 3+ ions from the top layer of the heterostructure, opens new possibilities for optoelectronic devices because samples in the form of films are desirable for circuit integration. The modeling of the photo-induced decay data yields the capture barrier in the range 620-660 meV, and contributes for the defect rules on the electrical properties of this heterostructure.

show abstract

Section: Electrical Characterization Through Decay Of Photo-induced Ccontrasting

confidence: 73%

Electron trapping in the photo-induced conductivity decay in GaAs/SnO2 heterostructure

Bueno

Scalvi

2018

Appl. Phys. A

View full text Add to dashboard Cite

show abstract

“…For example, Hall measurements give a very low mobility value: at T = 300 K mobility μ~3.15, ~8-12 and ~4.43-5.89 cm 2 /V . s for our film and for the similar polycrystalline tin dioxide films studied in [26] and in [27], respectively. Therefore, the condition for the observation of WL in disordered systems (kFl > > 1) is hardly realized.…”

Section: Resultsmentioning

confidence: 87%

“…Estimated from the Hall measurements, the concentration and the mobility of electrons for this film were 2.4 × 10 20 cm −3 and 3.15 cm 2 /V•s, respectively. In tin dioxides films with high charge carriers concentration, the temperature dependences of the resistivity ρ(T) in the low-temperature range can be interpreted within the framework of quantum corrections to the classical Drude conductivity mechanism [15,[26][27][28][29]. It should be noted that usually, WL and EEI effects inherent to the materials characterized by a low value of the temperature resistance coefficient (ratio ρ(4 K)/ρ(300 K) is usually within the range of about 1-2).…”

Section: Resultsmentioning

confidence: 99%

“…Taking into account that our sample B is a degenerate disordered semiconductor, we analyzed its electrical properties within the frame of the quantum corrections to conductivity model similar to the tin dioxide films investigated in [15,[26][27][28][29].…”

Section: Resultsmentioning

confidence: 99%

“…Depending on the crystalline structure and the dopants concentration, different charge transport mechanisms can dominate in SnO 2 films: hopping conductivity [20][21][22], thermal activation [23], tunneling through the grain boundaries [24,25]. Quantum corrections to the conductivity due to weak localization (WL) and electron-electron interaction effects (EEI) can be observed in highly doped tin dioxide films at low temperatures [15,[26][27][28][29]. WL and EEI effects are usually observed in disordered metals under the condition of a high probability of elastic scattering at impurity centers when the probability of backscattering of charge carriers increases [30].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Weak Localization in Polycrystalline Tin Dioxide Films

et al. 2020

View full text Add to dashboard Cite

The electrical and magnetotransport properties of nanocrystalline tin dioxide films were studied in the temperature range of 4–300 K and in magnetic fields up to 8 T. SnO2−δ films were fabricated by reactive direct current (DC) magnetron sputtering of a tin target with following 2 stage temperature annealing of synthesized samples. The nanocrystalline rutile structure of films was confirmed by X-ray diffraction analysis. The temperature dependences of the resistance R(T) and the negative magnetoresistance (MR) were explained within the frame of a model, taking into account quantum corrections to the classical Drude conductivity. Extracted from the R(T) and R(B) dependences electron dephasing length values indicate the 3D character of the weak localization (WL) in our samples.

show abstract

Room temperature ammonia gas sensor using Nd-doped SnO2 thin films and its characterization

Maheswari

Karunakaran

Chandrasekar

et al. 2020

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Nd-doped SnO 2 thin films are prepared by the nebulizer spray pyrolysis method. The compositional and morphological studies are discussed. The X-ray diffraction reveals that the films are polycrystalline in nature. The grain size increases as the doping concentration of Nd increases. The x-axis orientation of the films is enhanced by Nd doping. The intensity of the miller indices ( 200) is enhanced due to doping. In the Raman spectrum, the doping concentration-dependent intensity is observed. The quenching is observed in the photoluminescence spectrum. The transmittance and the band gap of films have been decreased due to doping. The 5 wt% Nd-doped film shows the maximum response to ammonia.

show abstract

Temperature dependent electron transport properties of degenerate SnO2 thin films

Cited by 15 publications

References 21 publications

Electron trapping in the photo-induced conductivity decay in GaAs/SnO2 heterostructure

Electron trapping in the photo-induced conductivity decay in GaAs/SnO2 heterostructure

Weak Localization in Polycrystalline Tin Dioxide Films

Room temperature ammonia gas sensor using Nd-doped SnO2 thin films and its characterization

Contact Info

Product

Resources

About