Temperature dependence of the energy gap in semiconductors

Manoogian, Alex; Woolley, J. C.

doi:10.1139/p84-043

Cited by 178 publications

(84 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The temperature dependence of E g in a semiconductor or insulator can be explained by the sum of two distinct mechanisms: thermal expansion of the lattice and the electron-phonon interaction. 23,24 In the case of CdTe, it is known that the lattice dilatation effect contributes more to the bandgap shift than the electron-phonon interaction above 100 K, while below 100 K the electron-phonon interaction is responsible for the energy shift. 23,25 The PL peak centered near 530 nm, which is thought to be caused by an interband transition, varied within a range of energies between the indirect and direct E g values (Fig.…”

Section: Resultsmentioning

confidence: 99%

Temperature dependence of the interband transition in a V2O5 film

et al. 2013

View full text Add to dashboard Cite

The temperature dependence of the interband transition in an α-V2O5 film was investigated using absorption and photoluminescence spectral measurements at a temperature range of 10–300 K. Transmission measurements in the experimental temperature range indicate that the α-V2O5 film has two distinct interband transitions, implying indirect and direct transitions. This result was confirmed by spectroscopic ellipsometry. The blue shift of both the transitions in the α-V2O5 film with decreasing temperature was explained by a reduction in the lattice-dilatation effect and the electron-phonon interaction. The PL measurements in the experimental temperature range showed that the emission near 530 nm is due to the indirect transition in the α-V2O5 film

show abstract

Section: Resultsmentioning

confidence: 99%

Temperature dependence of the interband transition in a V2O5 film

et al. 2013

View full text Add to dashboard Cite

show abstract

“…The temperature dependence of the band-gap energy, in special, can be explained by the sum of two distinct mechanisms: the electron-phonon interaction and the lattice thermal expansion. The main contribution to the temperature dependence of the band-gap energy is attributed to electron-phonon interactions [3][4][5][6]. This effect can also be broken up into two contributions: the effect of the second-order electronphonon interaction taken to first order in perturbation theory -the so-called Debye-Waller terms, and the effect of the first-order electron-phonon interaction taken to second order in perturbation theory -the Fan terms [4,5].…”

Section: Introductionmentioning

confidence: 99%

Thermal expansion contribution to the temperature dependence of excitonic transitions in GaAs and AlGaAs

et al. 2004

View full text Add to dashboard Cite

Photoluminescence and photoreflectance measurements have been used to determine excitonic transitions in the ternary AlxGa1−xAs alloy in the temperature range from 2 to 300 K. The effect of the thermal expansion contribution on the temperature dependence of excitonic transitions for different aluminum concentrations in the AlxGa1−xAs alloy is presented. Results from this study have shown that the negative thermal expansion (NTE) in the AlxGa1−xAs alloy, in the low temperature interval, induces a small blueshift in the optical transition energy. In the temperature range from ∼23 to ∼95 K there is a competition between the NTE effect and the electron-phonon interaction. Using the thermal expansion coefficient in the 2 -300 K temperature range, the thermal expansion contribution to GaAs, at room temperature, represents 21% of the total shift of the excitonic transition energy. After subtracting the thermal expansion contribution from the experimental temperature dependence of the excitonic transitions, in the AlxGa1−xAs alloy, the contribution to the electron-phonon interaction of the longitudinal optical phonon increases, relatively to the longitudinal acoustical phonon, with increasing Al concentration.

show abstract

“…This low and high temperature data published by Nakanishi and coworkers [85] was subsequently fitted over the entire temperature range [89] to the Manoogian-Lecrerc equation [90]:…”

Section: Optical Properties Of Ternary Cu-iii-vi Materialsmentioning

confidence: 99%

Processing of CuInSe2-Based Solar Cells: Characterization of Deposition Processes in Terms of Chemical Reaction Analyses. Final Report, 6 May 1995 - 31 December 1998

Anderson¹,

Stanbery²

2001

View full text Add to dashboard Cite

This project was initiated after the Boeing Company decided to terminate its photovoltaic research and development efforts, and donated some research equipment to UF. Billy Stanbery, who was part of the Boeing team, decided then to enroll at UF to pursue a Ph.D degree. As such these events constituted a rare direct technology transfer from industry to a university. This helped to preserve more than the published legacy of the solar cell efforts at Boeing, and jump-started a comprehensive, multifaceted, and multidisciplinary copper indium diselenide solar cell research effort at UF. 5-15 Micro-Raman scattering spectra of islands on two indium-rich CIS films grown on GaAs (100). The uppermost curve is from an island "pool" on a sodium-dosed film and the lower two are single and averaged spectra from isolated islands on the sample without sodium shown in Figure 5- field. It focused primarily on the physical and opto-electronic properties of the general class of I-III-VI2 and II-IV-V2 compound semiconductors. More recent reviews specifically oriented towards CIS materials and electronic properties [2][3][4][5][6] are also recommended reading for those seeking to familiarize themselves with key research results in this field.There are also a number of excellent books and reviews on photovoltaic device physics [7,8], on the general subject of solar cells and their applications [9,10], and others specifically oriented towards thin-film solar cells [11,12] Researchers have not always been careful to reserve the use of the compound designation CuInSe2 for single-phase material of the designated stoichiometry, an imprecision that is understandable in view of the difficulty in discriminating CuInSe2 from some other compounds in this material system, as will be discussed in detail elsewhere in this treatise. The compound designations such as CuInSe2 will be reserved herein for reference to single-phase material of finite solid solution extent, and multiphasic or materials of indeterminate structure composed of copper, indium, and selenium will be referred to by the customary acronym, in this case CIS. 3 This review begins with an overview of the physical properties of the principal copper ternary chalcogenides utilized for PV devices, including their thermochemistry, crystallography, and opto-electronic properties. All state-ofthe-art devices rely on alloys of these ternary compounds and employ alkali impurities, so the physical properties and effects of these additives will be presented, with an emphasis on their relevance to electronic carrier transport properties. This foundation will provide a basis from which to address the additional complexities and variability resulting from the plethora of materials processing methods and device structures which have been successfully employed to fabricate high efficiency PV devices utilizing absorbers belonging to this class of materials. Phase Chemistry of Cu-III-VI Material SystemsSignificant technological applications exist for Ag-III-VI2 compounds as non-linear optical mat...

show abstract

Temperature dependence of the energy gap in semiconductors

Cited by 178 publications

References 0 publications

Temperature dependence of the interband transition in a V2O5 film

Temperature dependence of the interband transition in a V2O5 film

Thermal expansion contribution to the temperature dependence of excitonic transitions in GaAs and AlGaAs

Processing of CuInSe2-Based Solar Cells: Characterization of Deposition Processes in Terms of Chemical Reaction Analyses. Final Report, 6 May 1995 - 31 December 1998

Contact Info

Product

Resources

About