volume 107, issue 1, P307-317 1981
DOI: 10.1002/pssb.2221070132
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Abstract: The temperature dependence of the ESR lines with g = 2.01 for boron-doped and with g = 2.0043for phosphorus-doped a-Si : H, associated with singly occupied tail states of the valence and conduction band, respectively, is investigated. Both resonances broaden considerably with increasing temperature, and the broadening 6Hpp( T) is related with the electrical conductivity a( T) as 8Hpp(T) = c[a(T)ln with 0.64 < n < 1. The g-values of both lines decrease with rising temperature. The spin density N , is for weakl…

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