Temperature and thickness dependence of steam oxidation of AlAs in cylindrical mesa structures

Osiński, Marek; Svimonishvili, Tengiz; Smolyakov, Gennady A.; Smagley, Vladimir A.; Maćkowiak, P.; Nakwaski, W.

doi:10.1109/68.930415

Cited by 19 publications

(18 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In particular, a few groups have offered explanations of the oxidation process 0018-9197 © 2013 IEEE for the creation of current apertures in VCSELs [17]- [19]. The model that is presented in this paper, describes the progression of the oxidation front over hundreds of microns under the influence of the internal forces, which arise due to the presence of a strained absorber layer on top of the multilayer selectively-oxidizing structure, in different geometries.…”

Section: Analytical Model For Oxidationmentioning

confidence: 97%

Lateral Oxidation of AlAs for Circular and Inverted Mesa Saturable Bragg Reflectors

Nabanja

Kolodziejski

Petrich

2013

IEEE J. Quantum Electron.

View full text Add to dashboard Cite

A model of the thermal oxidation kinetics that is based on the continuity equation is adapted to the fabrication of circular saturable Bragg reflector (SBR) mesa structures, as well as inverted mesa array structures. A comparison between theoretical calculations and experimental measurements shows good agreement, making the model a useful tool for the controllability of the structure-dependent oxidation process. The model is applied to the wet oxidation of buried AlAs layers for the fabrication of ultra-broadband, high index contrast, III-V/Al x O y SBRs. The rate of oxidation is found to be dependent not only on the oxidation temperature, but also on oxidation time, mesa geometry, and AlAs layer thickness. The two distinct large-area SBR structures, the circular mesa and the inverted mesa, are fabricated.

show abstract

Section: Analytical Model For Oxidationmentioning

confidence: 97%

Lateral Oxidation of AlAs for Circular and Inverted Mesa Saturable Bragg Reflectors

Nabanja

Kolodziejski

Petrich

2013

IEEE J. Quantum Electron.

View full text Add to dashboard Cite

show abstract

“…As previously reported and described by several papers [16,17], the oxidation evolves linearly, but tends to slightly accelerate when the aperture is about to close up. This effect, which deteriorates the process reproducibility when small apertures are targeted, is typical for mesa geometries for which the oxidizing front surface decreases against process time and can be reproduced by modelling [16][17][18][19]. This final stage acceleration varies with the process temperature and the oxidized layer thickness.…”

Section: Influencementioning

confidence: 99%

Anisotropy in the wet thermal oxidation of AlGaAs: influence of process parameters

Lafleur¹,

Almuneau²,

Arnoult³

et al. 2018

Opt. Mater. Express

View full text Add to dashboard Cite

The crystallographic anisotropy of the lateral selective thermal oxidation of AlGaAs alloys is experimentally studied. The anisotropic behavior of this oxidation process, used primarily for building a lateral confinement in vertical surface emitting lasers (VCSEL), is quantified by varying different process parameters and the geometrical shapes of laterally oxidized mesa structures. This experimental study aims to have a better control of the oxide aperture shape used in oxide-confined photonics devices.

show abstract

“…In general, both of these parameters can be temperature and layerthickness dependent. 12 Here we only consider the temperature dependence at a certain layer thickness of 8000 Å. The solution for this system can be written in a simple analytical form, As shown in Fig.…”

Section: Temperature Dependence Of Process Parametersmentioning

confidence: 99%

Sacrificial Al0.8Ga0.2As etching for microstructures in integrated optoelectronic devices

Guan

Guo

Liang

et al. 2006

Journal of Applied Physics

View full text Add to dashboard Cite

The lateral wet-etching kinetics of an Al0.8Ga0.2As sacrificial layer, a typical configuration for optoelectronic devices, has been investigated in detail. Expanding the one-dimensional Si and AlAs oxidation modes to the Al0.8Ga0.2As sacrificial layer etching process, compact analytical formulas were obtained for the time evolution of the etch front and for the etch rate. Through both experiment and theoretical calculations, the lateral etching process parameters, A, B, and B∕A, have been obtained for the different temperatures and etchant volume ratios. The etch rate is found to remain almost constant for a large range of etch length. However, when the etch temperature increases, a rapid increase in this rate is predicted. Activation energies for the process parameters, EA∼0.1eV and EB∼0.5eV, have also been obtained for the etchant volume ratio of 3:1 and the sacrificial layer thickness is 800nm.

show abstract

Temperature and thickness dependence of steam oxidation of AlAs in cylindrical mesa structures

Cited by 19 publications

References 10 publications

Lateral Oxidation of AlAs for Circular and Inverted Mesa Saturable Bragg Reflectors

Lateral Oxidation of AlAs for Circular and Inverted Mesa Saturable Bragg Reflectors

Anisotropy in the wet thermal oxidation of AlGaAs: influence of process parameters

Sacrificial Al0.8Ga0.2As etching for microstructures in integrated optoelectronic devices

Contact Info

Product

Resources

About