2011
DOI: 10.1016/j.jnucmat.2011.03.052
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TEM investigation of irradiation damage in single crystal CeO2

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Cited by 35 publications
(25 citation statements)
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“…However, the migration energy of the Ce vacancy has been estimated experimentally to be 2.3 eV [11] and calculated to be 5.3 eV [19]. Based on these activation energies and the observation [11] that the Ce vacancy is essential immobile below 675 K, it seems improbable that the Ce vacancy is mobile at the temperatures in either this study or the work of Ye et al [28]. On the other hand, the oxygen vacancy in CeO 2 has a measured and calculated migration energy of 0.52 eV [19], and the migration energy of the oxygen interstitial has been experimentally estimated to be 1.8 eV [11] and calculated to be 1.13 eV [19].…”
Section: Grain Growth and Grain Boundary Evolutionmentioning
confidence: 61%
See 1 more Smart Citation
“…However, the migration energy of the Ce vacancy has been estimated experimentally to be 2.3 eV [11] and calculated to be 5.3 eV [19]. Based on these activation energies and the observation [11] that the Ce vacancy is essential immobile below 675 K, it seems improbable that the Ce vacancy is mobile at the temperatures in either this study or the work of Ye et al [28]. On the other hand, the oxygen vacancy in CeO 2 has a measured and calculated migration energy of 0.52 eV [19], and the migration energy of the oxygen interstitial has been experimentally estimated to be 1.8 eV [11] and calculated to be 1.13 eV [19].…”
Section: Grain Growth and Grain Boundary Evolutionmentioning
confidence: 61%
“…This transition occurs at a faster rate for the 300 K irradiation in comparison to that at 400 K. This is attributed to the growth of dislocations during the irradiation at 400 K. It is well known that dislocations readily form in ion-irradiated ceria. In experiments on single crystal CeO 2 , it was observed that at lower irradiation temperatures higher densities of smaller dislocations were formed, whereas a lower density of larger dislocations was produced at higher temperatures [28]. This change in dislocation size at different temperatures was attributed to the Ce vacancy mobility.…”
Section: Grain Growth and Grain Boundary Evolutionmentioning
confidence: 97%
“…UO 2 for use in experimental studies can pose difficulties due to its radioactive nature. Cerium dioxide (CeO 2 ) is chosen as a non-radioactive surrogate for UO 2 in many studies due to their similar crystal structure and physical properties [6][7][8][9][10][11][12]. In addition, a recent molecular dynamics (MD) study carried out by Aidhy et al shows that irradiated CeO 2 and UO 2 form similar interstitial clusters when temperatures for each system are selected correctly [13].…”
Section: Introductionmentioning
confidence: 99%
“…Ye et al observed the formation and growth of dislocation loops in CeO 2 under energetic Kr ion irradiations [11]. However, loop properties such as habit plane, Burgers vector and nature (extrinsic or intrinsic) are not yet characterized thoroughly.…”
Section: Introductionmentioning
confidence: 99%
“…However in this case, due to a significantly higher irradiation temperature, the reduction is expected to be due to extended defects. 58,59 Irradiation damage was characterized using transmission electron microscopy (TEM). Figure 3(b) shows representative TEM micrographs which clearly reveal the presence of irradiation induced dislocation loops in both samples.…”
Section: B Impact Of Dislocation Loops On Thermal Conductivitymentioning
confidence: 99%