TEM/CBED determination of strain in silicon-based submicrometric electronic devices

Armigliato, A.; Balboni, R.; Balboni, S.; Frabboni, Stefano; Tixier, Aude; Carnevale, G.P.; Colpani, P.; Pavia, G.; Marmiroli, A.

doi:10.1016/s0968-4328(99)00084-0

Cited by 26 publications

(10 citation statements)

References 8 publications

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“…However, convergent beam electron diffraction (CBED) is a technique suitable for obtaining lattice parameters and local strain with sufficient spatial resolution and sensitivity [13,14]. A kinematic simulation procedure with a new dynamic correction scheme is adapted to CBED for strain measurement in thin films [15].…”

Section: Introductionmentioning

confidence: 99%

Measurement of strain and strain relaxation in free-standing Si membranes by convergent beam electron diffraction and finite element method

et al. 2011

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Section: Introductionmentioning

confidence: 99%

Measurement of strain and strain relaxation in free-standing Si membranes by convergent beam electron diffraction and finite element method

et al. 2011

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“…Holography offers combined advantages in terms of field-of-view, lateral resolution, and accuracy [3], however it may be rather demanding in terms of experimental setup and skills. Alternatively, electron diffraction (convergent beam, CBED) is a well-established method to measure strain in structures [4]. Also here, experimental complexity limits the use to expert analysis: determination of exact HOLZ line positions in highly strained material due to splitting of HOLZ lines is difficult and for each new material sophisticated CBED knowledge is required to set the optimum 9781-4244-3912-6/09/$25.00 ©2009 IEEE experimental conditions [5].…”

Section: Introductionmentioning

confidence: 99%

Using STEM with quasi-parallel illumination and an automated peak-finding routine for strain analysis at the nanometre scale

Sourty¹,

Stanley²,

Freitag³

2009

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

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Strain engineering has become an important tool to allow the semiconductor industry to meet roadmap requirements for device performance in the face of limits to device scaling. In addition, strain and/or lattice distortion through chemistry or mechanical stress, can have significant effect on mechanical, electrical and magnetic properties in a wide range of materials. Therefore, determination of strain in a processed, failed or natural sample will have ramifications in almost all fields of material science and solid state physics. Currently, only transmission electron microscopy (TEM) has proven capable of measuring such buried strains at the required spatial resolutions. This contribution presents an automated methodology to measure strain with high accuracy, high reproducibility, and high spatial resolution yet without the need for elaborate experimental setup or highly trained operator. The methodology is first put in perspective and compared to other available methodologies. Important aspects of the experimental setup are then detailed as well as the specificity of the methodology and used algorithm. Three different cases are described: SiGe multilayer, strained transistor, and indented sapphire and the strain measured discussed.

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“…In electronic device technology, the presence of localized stress fields at the perimeter of the components of an integrated circuit found to play a negative role in obtaining the required device characteristics [4]. A. Armigliato et al, reported strain determination in silicon-based submicrometric electron devices using electron microscopy methods [5]. Recently, it was shown about the possibility of replicating nanostructures on silicon by low energy ion beams by etching amorphized zones that were not shadowed by nanostructures during ion beam irradiation [6].…”

Section: Introductionmentioning

confidence: 99%

“…Using TEM, both imaging mode (i.e., image contrast and lattice imaging) and diffraction mode (selected area diffraction (SAD), nano-beam diffraction (NBD) and large angle convergent beam diffraction (CBED)) have been exploited for the strain determination [3,5,15,16,17,18,19,20]. The strain was measured by comparing the image contrast predicted by the numerically integrated two-beam Howie-Whelan equations with the two-beam diffraction contrast images of strained copper matrix with coherent cobalt inclusions [15].…”

Section: Introductionmentioning

confidence: 99%

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MeV ion-induced strain at nanoisland-semiconductor surface and interfaces

Ghatak

Satpati

Umananda

et al. 2006

Nuclear Instruments and Methods in Physics Research Section B:

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Strain at surfaces and interfaces play an important role in the optical and electronic properties of materials. MeV ion-induced strain determination in single crystal silicon substrates and in Ag (nanoisland)/Si(111) at surface and interfaces has been carried out using transmission electron microscopy (TEM) and surface-sensitive X-ray diffraction. Ag nanoislands are grown under various surface treatments using thermal evaporation in high vacuum conditions. Irradiation has been carried out with 1.5 MeV Au 2+ ions at various fluences and impact angles. Selected area electron diffraction (SAED) and lattice imaging (using TEM) has been used to determine the strain at surface and interfaces. Preliminary results on the use of surfacesensitive asymmetric x-ray Bragg reflection method have been discussed. The TEM results directly indicate a contraction in the silicon lattice due to ion-induced effects. The nanoislands have shadowed the ion beam resulting in lesser strain beneath the island structures in silicon substrates. High-resolution lattice imaging has also been used to determine the strain in around amorphization zones caused by the ion irradiation.

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TEM/CBED determination of strain in silicon-based submicrometric electronic devices

Cited by 26 publications

References 8 publications

Measurement of strain and strain relaxation in free-standing Si membranes by convergent beam electron diffraction and finite element method

Measurement of strain and strain relaxation in free-standing Si membranes by convergent beam electron diffraction and finite element method

Using STEM with quasi-parallel illumination and an automated peak-finding routine for strain analysis at the nanometre scale

MeV ion-induced strain at nanoisland-semiconductor surface and interfaces

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