Taming the Mott Transition for a Novel Mott Transistor

Inoue, Isao; Rozenberg, M. J.

doi:10.1002/adfm.200800558

Cited by 72 publications

(67 citation statements)

References 45 publications

(56 reference statements)

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“…Another actively pursued direction is to exploit anomalously strong responses to weak stimuli that are inherent to quantum materials. Fashioning a Mott transistor 17,18 is one example of this concept. Memory effects rooted in electronic/structural phase separation 19 and/or electronic correlations are closely related to quantum materials; memory effects are essential for the solidstate implementations of biologically inspired circuits 20 and may also facilitate energy-efficient computing.…”

Section: Nature Materials Doi: 101038/nmat5017mentioning

confidence: 99%

Towards properties on demand in quantum materials

2017

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Q uantum materials are on the ascent. This term embodies a vast portfolio of compounds and phenomena where ramifications of quantum mechanics are demonstrably real. Quantum materials are in the vanguard of contemporary physics in part because these systems afford an exceptional venue to uncover the many roles of symmetry, topology, dimensionality and strong correlations in macroscopic observables. Here we set out to explore the ways and means of creating new states of matter in quantum materials and manipulating their phases via external stimuli. Practical control of these properties is a precondition for exploiting quantum advantages in new photonic, electronic and energy technologies, a task of significant societal impact 1 . We will primarily focus on the following classes of quantum materials: transition metal oxides, Fe-and Cu-based high-T c superconductors, van der Waals semiconductors, topological insulators and Weyl semimetals, and, finally, graphene.The properties of quantum materials are anomalously sensitive to external stimuli. In these systems, interactions associated with spin, charge, lattice and orbital degrees of freedom are commonly on par with the electronic kinetic energy. A rather fragile balance between coexisting and competing ground states can be readily shifted via external stimuli, leading to a raft of quantum phases and transitions between them 2,3 . Furthermore, certain classes of driven quantum states (Fig. 1a and Box 1) are explicit products of coherent interaction between light and matter 4-6 . Alternatively, the properties of quantum materials can be pre-programmed by directly manipulating the electronic wavefunction and the attendant Berry phase that give rise to the anomalous velocity of electrons in a solid [7][8][9] . These complementary avenues of controls mean that investigations no longer need to be reduced to merely observing (in contrast, for example, to astrophysics). Instead, it is now feasible to attain, in a predictable fashion, 'properties on demand' by steering a quantum material towards a desirable ground, metastable or transient state. The past decade has witnessed an explosion in the field of quantum materials, headlined by the predictions and discoveries of novel Landau-symmetry-broken phases in correlated electron systems, topological phases in systems with strong spin-orbit coupling, and ultra-manipulable materials platforms based on two-dimensional van der Waals crystals. Discovering pathways to experimentally realize quantum phases of matter and exert control over their properties is a central goal of modern condensed-matter physics, which holds promise for a new generation of electronic/photonic devices with currently inaccessible and likely unimaginable functionalities. In this Review, we describe emerging strategies for selectively perturbing microscopic interaction parameters, which can be used to transform materials into a desired quantum state. Particular emphasis will be placed on recent successes to tailor electronic interaction parameters through th...

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Section: Nature Materials Doi: 101038/nmat5017mentioning

confidence: 99%

Towards properties on demand in quantum materials

2017

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“…Flash memories could soon reach their miniaturization limits mostly because reliably keeping enough electrons in an always smaller cell size will become increasingly difficult [1] . The control of electrical resistance at the nanometer scale therefore requires new concepts, and the ultimate resistance-change device is believed to exploit a purely electronic phase change such as the Mott insulator to insulator transition [ 2 ].…”

mentioning

confidence: 99%

Electric‐Field‐Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories

Cario¹,

Vaju²,

Corraze³

et al. 2010

Advanced Materials

133

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[ # ] these authors contributes equally to this work Keywords: resistive switching, non-volatile memory, Mott insulator, metal-insulator transitionThe fundamental building blocks of modern silicon-based microelectronics, such as double gate transistors in non-volatile Flash memories, are based on the control of electrical resistance by electrostatic charging. Flash memories could soon reach their miniaturization limits mostly because reliably keeping enough electrons in an always smaller cell size will become increasingly difficult [1] . The control of electrical resistance at the nanometer scale therefore requires new concepts, and the ultimate resistance-change device is believed to exploit a purely electronic phase change such as the Mott insulator to insulator transition [ 2 ].Here we show that application of short electric pulses allows to switch back and forth between an initial high-resistance insulating state ("0" state) and a low-resistance "metallic" state ("1" state) in the whole class of Mott Insulator compounds AM 4 X 8 (A = Ga, Ge; M= V, Nb, Ta; X = S, Se). We found that electric fields as low as 2 kV/cm induce an electronic phase change in these compounds from a Mott insulating state to a metallic-like state. Our results suggest that this transition belongs to a new class of resistive switching and might be explained by recent theoretical works predicting that an insulator to metal transition can be achieved by a simple electric field in a Mott Insulator [3,4,5] . This new type of resistive switching has potential to build up a new class of Resistive Random Access Memory (RRAM) with fast writing/erasing times (50 ns to 10 µs) and resistance ratios R/R of the order of 25% at room temperature.

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“…[19] , where x could be controlled by the Sr concentration, [4] oxygen pressure during film growth, [18] and gate voltage. [20] We investigate samples of (La,Sr)MnO 3 (Figure 2b). [19,20] This is accompanied by the injection of electrons into films and moves the sample to a lower x as the left arrow shows in Figure 2a.…”

Section: Introductionmentioning

confidence: 99%

“…[20] We investigate samples of (La,Sr)MnO 3 (Figure 2b). [19,20] This is accompanied by the injection of electrons into films and moves the sample to a lower x as the left arrow shows in Figure 2a. On the contrary, negative V G extracts electrons with O 2-ions migrating back to the films (Figure 2c), increasing the x in LSMO (the right arrow in Figure 2a).…”

Section: Introductionmentioning

confidence: 99%