Synthesis of uniform porous NiO nanotetrahedra and their excellent gas-sensing performance toward formaldehyde

Abstract

Porous NiO nanotetrahedrons and elongated irregular nanoparticles were synthesized, exhibiting superior gas-sensing behavior toward formaldehyde with high gas sensitivity and stability.

Semiconductor Metal Oxides as Chemoresistive Sensors for Detecting Volatile Organic Compounds

“…Except for n-type semiconductor metal oxides, p-type semiconductor metal oxides for formaldehyde sensing have also received much attention owing to their suitable catalytic effect. For instance, Fu et al prepared tetrahedron-like NiO nanostructures by a solvothermal reaction followed by calcination at different temperatures (400–600 °C) [175]. NiO nanotetrahedra annealed at 500 °C showed an excellent sensitivity to formaldehyde compared with other annealing temperatures.…”

Konjac glucomannan-templated synthesis of three-dimensional NiO nanostructures assembled from porous NiO nanoplates for gas sensors

“…The good linear dependence indicates that the porous NiO nanoplates are a good promising material for H 2 S sensors. The NiO nanostructures-based sensors have been widely investigated for excellent detection of volatile organic compounds [38][39][40][41][42][43][44] but there are limited reports about their hydrogen sulde sensing characteristics. [45][46][47] The NH 3 sensing characteristics of the porous NiO nanoplates are shown in Fig.…”

State-of-the-Art Research on Chemiresistive Gas Sensors in Korea: Emphasis on the Achievements of the Research Labs of Professors Hyoun Woo Kim and Sang Sub Kim

“…To date, a variety of gas sensors have been utilized to detect toxic and hazardous gases. Among these, metal–oxide semiconductor (MOS) gas sensors, whose operation is based on the change in the resistance upon exposure to target gases, have attracted significant attention owing to their low cost, low toxicity, simple fabrication route, robustness, high stability, fast response/recovery times, and sensitivity to detect a wide range of target gases [ 18 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 , 47 , 48 , 49 , 50 , 51 , 52 , 53 , 54 , 55 , 56 , 57 , 58 , 59 , 60 , 61 , 62 , 63 ]. Notably, in addition to MOS, materials based on conducting polymers and graphene have been employed for the realization of resistive-gas sensors [ 18 ].…”

“…Thus, various synthesis approaches or strategies have been used to overcome the limitations of this type of gas sensors: namely, poor selectivity and high operating temperature. A comparison of the most commonly used pristine metal oxides, with different surface morphologies, as a sensing layer in chemiresistive-type of gas sensors is presented in Table 2 [ 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 , 47 , 48 , 49 , 50 , 51 , 52 , 53 , 54 , 55 , 56 , 57 , 58 , 59 , 60 , 61 , 62 , 63 ].…”

“…The general gas-sensing mechanism of resistive-based gas sensors is mainly based on the resistance variations of the sensing materials in the presence of target gases [ 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 , 47 , 48 , 49 , 50 , 51 , 52 , 53 , 54 , 55 , 56 , 57 , 58 , 59 , 60 , 61 , 62 , 63 ]. A scheme of the general detection mechanism of resistive-based n-type and p-type MOSs sensors, in the presence of oxidizing/reducing gases, is presented in Scheme 1 .…”