2017
DOI: 10.1002/adfm.201604685
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Synthesis of Ternary and Quaternary Au and Pt Decorated CdSe/CdS Heteronanoplatelets with Controllable Morphology

Abstract: 1 of 11) 1604685 separation, the mixing of electronic states, and how synergistic properties of metals and the semiconductors occur in the same particle. [1b,2] The great advantage of ultrafast electron transfer and charge carrier (electron-hole) separation at the metalsemiconductor interface has motivated researchers to discuss applications in, e.g., photocatalytic water splitting, [3] pollutant degradation, [4] field effect transistors, [5] CO 2 reduction reactions, [6] etc. The metal-decorated nanostru… Show more

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Cited by 54 publications

(77 citation statements)
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“…If more Au was deposited by extending the precursor addition to 20 min or more, heterogeneous nucleation of Au elsewhere on the CdS surface occurred as well. The different particle shapes for Pt and Au are in accordance with the observations made by Naskar et al for nanoplatelet seeds, , excluding the preference for heavier chalcogenides, since CdTe was not investigated in these works. There exist three differences between Pt and Au growth: the higher reactivity of the HAuCl 4 precursor (indicated by the much lower reaction temperature), its higher reduction potential (see Scheme A), and the presence of Cl – ions, which are known to affect Cd chalcogenide surfaces .…”
Section: Results
supporting
confidence: 89%
How this paper cites the one you are viewing
“…If more Au was deposited by extending the precursor addition to 20 min or more, heterogeneous nucleation of Au elsewhere on the CdS surface occurred as well. The different particle shapes for Pt and Au are in accordance with the observations made by Naskar et al for nanoplatelet seeds, , excluding the preference for heavier chalcogenides, since CdTe was not investigated in these works. There exist three differences between Pt and Au growth: the higher reactivity of the HAuCl 4 precursor (indicated by the much lower reaction temperature), its higher reduction potential (see Scheme A), and the presence of Cl – ions, which are known to affect Cd chalcogenide surfaces .…”
Section: Results
supporting
confidence: 89%
How this paper cites the one you are viewing
“…Figure a demonstrates the schematic illustration of the morphological and structural evolution for P and S anion exchange processes mediated by the edge-controlled growth of Co 2 P with a middle amount (3.6 mg) of the cobalt precursor. Figure b shows Co 2 P domains located at the edges of Cu 1.81 S NPls, similar to the previously reported Cu 2– x S@Ru nanocages, forming a core–dotted morphology, which was due to the relatively more active edges than the basal surfaces . As the reaction continued, the desulfurizing effect of TPOP induced P anion exchange mainly from the top and bottom surface due to their less protection compared to the edge physical barriers, so the plate thickness in the central region rapidly decreased as mentioned above (Figure c,d).…”
Section: Hollow Dotted and Hollow Crown Cu3p1–x S X -Co2p Hns
supporting
confidence: 86%
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“…The absorption spectra of gold decorated CdSe/CdS NRs was measured in an integration sphere to eliminate the effect of scattering at higher wavelengths. Comparable absorption spectra for metal decorated metalchalcogenide nanoparticles have been found in literature ,,. ITO itself absorbs photons in the UV/Vis regime (see Supporting Information Figure SI‐7).…”
Section: Results
supporting
confidence: 65%