Synthesis of simple, low cost and benign sol–gel Cu2InxZn1−xSnS4alloy thin films: influence of different rapid thermal annealing conditions and their photovoltaic solar cells

Sui, Yongming; Wu, Yanjie; Z, Yu; Wang, Fengyou; Gao, Yuan; Lv, Shiquan; Wang, Zhanwu; Sun, Yunfei; Wei, Maobin; Ye, Bin; Yang, Lili

doi:10.1039/c7ra12289f

Cited by 11 publications

(6 citation statements)

References 39 publications

(53 reference statements)

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“…As shown in Figure 2a, strong diffraction peaks at 2θ = 28.53, 32.99, 47.33 and 56.17° were observed for all films, which were assigned to the (112), (200), (220) and (312) diffraction planes of kesterite CZTS (JCPDS card no. 26-0575) [26,27]. In addition, two weak peaks were observed at 2θ = 69.27° and 76.44°, which were ascribed to the (008) and (332) planes of kesterite CZTS [28], suggesting that the crystalline quality of the Cu 2 Mg x Zn 1− x SnS 4 films was satisfactory.…”

Section: Resultsmentioning

confidence: 99%

Investigation of Optimum Mg Doping Content and Annealing Parameters of Cu2MgxZn1−xSnS4 Thin Films for Solar Cells

Sui

Jiang

et al. 2019

Nanomaterials

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Cu2MgxZn1−xSnS4 (0 ≤ x ≤0.6) thin films were prepared by a simple, low-temperature (300 °C) and low-cost sol–gel spin coating method followed by post-annealing at optimum conditions. We optimized the annealing conditions and investigated the effect of Mg content on the crystalline quality, electrical and optical performances of the Cu2MgxZn1−xSnS4 thin films. It was found that the Cu2MgxZn1−xSnS4 film annealed at 580 °C for 60 min contained large grain, less grain boundaries and high carrier concentration. Pure phase kesterite Cu2MgxZn1−xSnS4 (0 ≤ x ≤ 0.6) thin films were obtained by using optimal annealing conditions; notably, the smaller Zn2+ ions in the Cu2ZnSnS4 lattice were replaced by larger Mg2+ ions. With an increase in x from 0 to 0.6, the band gap energy of the films decreased from 1.43 to 1.29 eV. When the ratio of Mg/Mg + Zn is 0.2 (x = 0.2), the grain size of Cu2MgxZn1−xSnS4 reaches a maximum value of 1.5 μm and the surface morphology is smooth and dense. Simultaneously, the electrical performance of Cu2MgxZn1−xSnS4 thin film is optimized at x = 0.2, the carrier concentration reaches a maximum value of 3.29 × 1018 cm−3.

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Section: Resultsmentioning

confidence: 99%

Investigation of Optimum Mg Doping Content and Annealing Parameters of Cu2MgxZn1−xSnS4 Thin Films for Solar Cells

Sui

Jiang

et al. 2019

Nanomaterials

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“…Hence, CZTSSe is considered to be a potential absorber material. However, the conversion efficiency of CZTSSe photovoltaic cells hasonly achieved 12.6%, which is still far lower than the conversion efficiency of CIGSe-based solar cells (22.9%) [7,8,9]. In order to improve conversion efficiency and make CZTSSe industrially viable, a lot of researches are still needed.…”

Section: Introductionmentioning

confidence: 99%

Investigation on the Selenization Treatment of Kesterite Cu2Mg0.2Zn0.8Sn(S,Se)4 Films for Solar Cell

Jiang

Sui

et al. 2019

Nanomaterials

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High-selenium Cu2Mg0.2Zn0.8Sn(S,Se)4 (CMZTSSe) films were prepared on a soda lime glass substrate using the sol–gel spin coating method, followed by selenization treatment. In this work, we investigated the effects of selenization temperature and selenization time on the crystal quality, and electrical and optical properties of CMZTSSe films. The study on the micro-structure by XRD, Raman, X-ray photoelectron spectroscopy (XPS), and energy-dispersive X-ray spectroscopy (EDS) analysis showed that all CMZTSSe samples had kesterite crystalline structure. In addition, the crystalline quality of CMZTSSe is improved and larger Se takes the site of S in CMZTSSe with the increase of selenization temperature and selenization time. When increasing the selenization temperature from 500 to 530 °C and increasing the annealing time from 10 to 15 min, the morphological studies showed that the microstructures of the films were dense and void-free. When further increasing the temperature and time, the crystalline quality of the films began to deteriorate. In addition, the bandgaps of CMZTSSe are tuned from 1.06 to 0.93 eV through adjusting the selenization conditions. When CMZTSSe samples are annealed at 530 °C for 15 min under Se atmosphere, the crystal quality and optical–electrical characteristics of CMZTSSe will be optimal, and the grain size and carrier concentration reach maximums of 1.5–2.5 μm and 6.47 × 1018 cm−3.

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“…Various research groups have conducted extensive research to study the impact of In doping on the CZTSSe absorber thin films . Some research groups have reported the substitution of Zn sites by In, as Zn 2+ (0.74 Å) has a comparable ionic radius to In 3+ (0.80 Å). , Furthermore, the peak for the corresponding (112) plane shows a decrease in the relative peak intensity for higher (In-CZTSSe-3) and lower (In-CZTSSe-3) In-doped samples. It could be observed due to the inadequate In doping amount in CZTSSe samples, which may deteriorate the absorber quality.…”

Section: Resultsmentioning

confidence: 99%

Improving the Device Performance of CZTSSe Thin-Film Solar Cells via Indium Doping

Korade,

Gour,

Karade

et al. 2023

ACS Appl. Mater. Interfaces

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Synthesis of simple, low cost and benign sol–gel Cu₂In_xZn_1−xSnS₄alloy thin films: influence of different rapid thermal annealing conditions and their photovoltaic solar cells

Abstract: Cu2InxZn1−xSnS4 (x = 0.4) alloy thin films were synthesized on soda lime glass (SLG) substrate by a simple low-cost sol–gel method followed by a rapid annealing technique.

Cited by 11 publications

References 39 publications

Investigation of Optimum Mg Doping Content and Annealing Parameters of Cu2MgxZn1−xSnS4 Thin Films for Solar Cells

Investigation of Optimum Mg Doping Content and Annealing Parameters of Cu2MgxZn1−xSnS4 Thin Films for Solar Cells

Investigation on the Selenization Treatment of Kesterite Cu2Mg0.2Zn0.8Sn(S,Se)4 Films for Solar Cell

Improving the Device Performance of CZTSSe Thin-Film Solar Cells via Indium Doping

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