Synthesis and Transport Properties of Degenerate P-Type Nb-Doped WS<sub>2</sub> Monolayers

Jin, Yuanyuan; Zeng, Zanyang; Xu, Zhengwei; Lin, Yung‐Chang; Bi, Kaixi; Shao, Gonglei; Hu, Travis Shihao; Wang, Shanshan; Li, Shisheng; Suenaga, Kazu; Duan, Huigao; Feng, Yexin; Liu, Song

doi:10.1021/acs.chemmater.9b00913

Cited by 81 publications

(134 citation statements)

References 52 publications

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“…We first studied the bandgap engineering of TMDCs by changing the dopant concentration, using [31] and the covalent radii of W (137 pm) and Nb (134 pm) are very close. These features suggest the possible substitutional doping of Nb into WS2 with few defects and the top and side view structures of Nb-doped WS2 are shown in Figure 1a Figures 2k and 2l), indicating that the Fermi level of the Nb-doped WS2 is shifted toward the VBM.…”

Section: Resultsmentioning

confidence: 99%

Modulating Electronic Structure of Monolayer Transition Metal Dichalcogenides by Substitutional Nb‐Doping

Tang

Tan

et al. 2020

Adv Funct Materials

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Modulating electronic structure of monolayer transition metal dichalcogenides (TMDCs) is important for many applications and doping is an effective way towards this goal, yet is challenging to control. Here we report the in-situ substitutional doping of niobium (Nb) into TMDCs with tunable concentrations during chemical vapour deposition. Taking monolayer WS2 as an example, doping Nb into its lattice leads to bandgap changes in the range 1.98 eV to 1.65 eV. Noteworthy, 2 electrical transport measurements and density functional theory calculations show that the 4d electron orbitals of the Nb dopants contribute to the density of states of Nb-doped WS2 around the Fermi level, resulting in an n to p-type conversion. Nb-doping also reduces the energy barrier of hydrogen absorption in WS2, leading to an improved electrocatalytic hydrogen evolution performance. These results highlight the effectiveness of controlled doping in modulating the electronic structure of TMDCs and their use in electronic related applications.

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Section: Resultsmentioning

confidence: 99%

Modulating Electronic Structure of Monolayer Transition Metal Dichalcogenides by Substitutional Nb‐Doping

Tang

Tan

et al. 2020

Adv Funct Materials

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“…2D materials, such as graphene and transition metal dichalcogenides (TMDCs), have attracted incredible interest because of their extraordinary properties that make them promising candidates for next generation electronic and optoelectronic applications. [ 1–10 ] In contrast to graphene, TMDCs are semiconducting materials with layer‐dependent bandgap in the range of 1−2 eV, [ 11,12 ] exhibiting rich novel fundamental physical properties and promising applications in electronics and optoelectronics. [ 13–16 ] In spite of the attractive photoresponse performances, most of photodetectors based on TMDCs only show photoresponse in visible range, [ 17–19 ] which seriously hinder their real applications.…”

Section: Introductionmentioning

confidence: 99%

High‐Performance Broadband Photodetectors of Heterogeneous 2D Inorganic Molecular Sb₂O₃/Monolayer MoS₂ Crystals Grown via Chemical Vapor Deposition

Liu

Huang

et al. 2020

Advanced Optical Materials

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The newly emerged 2D materials heterostructures, including layered and nonlayered structures, are regarded as the building blocks for future high performance optoelectronic devices. However, it still remains a great challenge to directly synthesize 2D heterostructures for realizing broadband detection in photodetectors. In this work, the growth of vertically stacked inorganic molecular Sb2O3/monolayer MoS2 heterostructures through a two‐step chemical vapor deposition method is demonstrated, and high performance ultraviolet/near‐infrared photodetectors based on the achieved heterostructures are further developed. Excellent responsivity of 5.3 × 104 A W−1 and detectivity of 2.0 × 1015 Jones are obtained under 457 nm illumination. Additionally, the photodetection range can be extended to near‐infrared region. Maximum responsivity of 7.8 A W−1, detectivity of 3.4 × 1011 Jones, and fast response speed (<60 ms) are obtained under 1064 nm laser illumination at room temperature, which is far superior to those of the previously reported ultra‐thin 2D van de Waals heterostructures. The inorganic molecular Sb2O3/monolayer MoS2 heterostructures enrich the family of 2D materials heterostructures, showing potential applications in high performance functional electronics and optoelectronics.

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“…CVD is popular for manufacturing 2D materials because of its high level for controllable growth and largescale production [24,25]. Several groups reported thermal CVD growth of Nb-doped monolayer WS 2 using solid powder sources, without the determination of carrier type after doping [14,18,26,27]. Only recently, liquid-mediated CVD growth was adopted to achieve p-type conductivity in Nb-doped monolayer WS 2 by liquid-phase precursor mixing [28].…”

Section: Introductionmentioning

confidence: 99%

Efficient control of emission and carrier polarity in WS2 monolayer by indium doping

et al. 2021

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Substitutional doping of two-dimensional (2D) transition metal dichalcogenides (TMDs) has been recognized as a promising strategy to tune their optoelectronic properties for a wide array of applications. However, controllable doping of TMDs remains a challenging issue due to the natural doping of these materials. Here, we demonstrate the controllable growth of indium-doped p-type WS 2 monolayers with various doping concentrations via chemical vapor deposition (CVD) of a host tungsten (W) source and indium (In) dopant. Scanning transmission electron microscopy confirmed that In atoms successfully substitute the W atoms in the WS 2 lattice. Intriguingly, the photoluminescence of the doped sample experiences strong intensity modulation by the doping concentration, which first increases remarkably with an enhancement factor up to~35 and then decreases gradually when further increasing the doping concentration. Such a phenomenon is attributed to the progressive change of the exciton to trion ratio as well as the defect concentration in the doped samples. The assignment was further verified by the electric behavior of the fabricated In-doped WS 2 field effect transistors, which changes regularly from n-type to bipolar and finally to p-type behavior with increasing doping concentration. The successful growth of p-type monolayer WS 2 and the dual control of its optical and electrical properties by In doping may provide a promising method to engineer the opto-electronic properties of 2D materials.

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Synthesis and Transport Properties of Degenerate P-Type Nb-Doped WS₂ Monolayers

Cited by 81 publications

References 52 publications

Modulating Electronic Structure of Monolayer Transition Metal Dichalcogenides by Substitutional Nb‐Doping

Modulating Electronic Structure of Monolayer Transition Metal Dichalcogenides by Substitutional Nb‐Doping

High‐Performance Broadband Photodetectors of Heterogeneous 2D Inorganic Molecular Sb₂O₃/Monolayer MoS₂ Crystals Grown via Chemical Vapor Deposition

Efficient control of emission and carrier polarity in WS2 monolayer by indium doping

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Synthesis and Transport Properties of Degenerate P-Type Nb-Doped WS2 Monolayers

Cited by 81 publications

References 52 publications

Modulating Electronic Structure of Monolayer Transition Metal Dichalcogenides by Substitutional Nb‐Doping

Modulating Electronic Structure of Monolayer Transition Metal Dichalcogenides by Substitutional Nb‐Doping

High‐Performance Broadband Photodetectors of Heterogeneous 2D Inorganic Molecular Sb2O3/Monolayer MoS2 Crystals Grown via Chemical Vapor Deposition

Efficient control of emission and carrier polarity in WS2 monolayer by indium doping

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Synthesis and Transport Properties of Degenerate P-Type Nb-Doped WS₂ Monolayers

High‐Performance Broadband Photodetectors of Heterogeneous 2D Inorganic Molecular Sb₂O₃/Monolayer MoS₂ Crystals Grown via Chemical Vapor Deposition