Synthesis and optoelectronic properties of quaternary GaInAsSb alloy nanosheets

Abstract

Quasi-one-dimensional (1D) nanostructures have been extensively explored for electronic and optoelectronic devices on account of their unique morphologies and versatile physical properties. Here, we report the successful synthesis of GaInAsSb alloy nanosheets by a simple chemical vapor deposition method. The grown GaInAsSb alloy nanosheets are pure zinc-blende single crystals, which show nanosize-induced extraordinary optoelectronic properties as compared with bulk materials. μ-Raman spectra exhibit a multi-mode phonon vibration behavior with clear frequency shifts under varied laser power. Photoluminescence measurements reveal a strong light emission in the near-infrared region (1985 nm), and the obtained Varshni thermal coefficients α and β are smaller than those of the bulk counterparts due to the size confinement effect. In addition, photodetectors (PDs) based on these single-alloy nanosheets were constructed for the first time. The PDs show a strong response in the near-infrared region with the external quantum efficiency of 8.05 × 10%, and the responsivity of 0.675 × 10 A W. These novel nanostructures would make contributions to the study of fundamental physical phenomena in quasi-1D nanomaterial systems and can be potential building blocks for optoelectronic and quantum devices.

Vapor growth of CdS nanowires/WS2 nanosheet heterostructures with sensitive photodetections

“…Since the studies of heterostructures between 2D layered materials showed promising applications in various fields, group III-V and II-VI non-layered semiconductors with distinct properties were also incorporated into TMDs materials and formed new kind heterostructures to realize novel functionality [10][11][12][13]. For example, CdS/MoS 2 [14], PbS/MoS 2 [15] and GaN/WSe 2 [16] vertical heterostructures have been prepared with exotic performances compared with single TMDs.…”

Optoelectronic properties of single-crystalline GaInAsSb quaternary alloy nanowires

“…When the incident light intensity is 10 mW/cm 2 , the obtained R for this PD is 158 A/W and the EQE can reach to 2.0 × 10 4 %, both of which are higher than those reported for GaInAsSb thin-film PDs [24] and are comparable with other previously reported single-nanostructured PDs. [36,37] The high R and EQE of the representative PD can be explained with two factors. Firstly, the large surface-tovolume ratio of the nanowires can easily induce the hole-trap states at the nanowire surface, and these trap states can somehow increase the photocurrent density effectively.…”

Semiconductor Solid‐Solution Nanostructures: Synthesis, Property Tailoring, and Applications

“…Compared with binary and ternary solid‐solutions, quaternary semiconductor solid‐solution exhibits some unexpected properties valuable for technological applications in diverse fields. So far, the quaternary semiconductor solid‐solutions have been reported for groups (II–VI)–(II–VI), (III–V)–(III–V), and (II–VI)–(III–V) material systems, which mainly include ZnCdSSe, ZnCdSeTe, GaInAsSb, GaN‐ZnO, GaP‐ZnS, GaP‐ZnSe, and GaAs‐ZnSe …”

“…The CVD method is especially effective to synthesize quaternary solid‐solution nanostructures made of two different binary compounds. For example, Pan and co‐workers has demonstrated the successful synthesis of a variety of quaternary solid‐solution nanostructures such as GaInAsSb, GaZnSeAs, and ZnCdSSe using this method, in which the binary compound precursors are isolated in two separated transport channels and are transported to the reaction zone at the same time (Figure b). Using similar method, we have also fabricated GaP‐ZnS, GaP‐ZnSe, and GaN‐ZnO solid‐solution nanowires with variable sizes and tunable optoelectronic properties.…”