Synthesis and Ferroelectric Properties of Sol–Gel Derived Intergrowth-Superlattice-Structured SrBi₄Ti₄O₁₅-Bi₄Ti₃O₁₂ Thin Films

Abstract

Intergrowth-superlattice-structured SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) films prepared on p-Si substrates by sol-gel processing. Synthesized SBT–BIT films exhibit good ferroelectric properties. As the annealing temperature increases from 600°C to 700°C, the remanent polarization Prof SBT–BIT films increases, while the coercive electric field Ecdecreases. SBT–BIT films annealed at 700°C have a Prvalue of 18.9µC/cm2which is higher than that of SBT (16.8µC/cm2) and BIT (14.6µC/cm2), and have the lowest Ecof 142 kV/cm which is almost the same as that of SBT and BIT. The C-V curves of Ag/SBT-BIT/p-Si heterostructures show the clockwise hysteresis loops which reveal the memory effect due to the polarization. The memory window in C-V curve of Ag/SBT-BIT/p-Si is larger than that of Ag/SBT/p-Si heterostructure or Ag/BIT/p-Si heterostructure.

Electrical analysis of inter-growth structured Bi 4 Ti 3 O 12 –Na 0.5 Bi 4.5 Ti 4 O 15 ceramics

“…[1] Later on, a series of mixedlayer-type compounds were widely reported in literature, such as Bi 5 TiNbWO 15 , Na 0.5 Bi 4.5 Nb 2 WO 15 , Bi 7 Ti 4 TaO 21 , M I Bi 6 Ti 3 Nb 2 O 21 (M I = Sr, Ba), and M II Bi 8 Ti 7 O 27 (M II = Ca, Sr, Ba, Pb and Na 0.5 Bi 0.5 ). [2][3][4][5][6][7] To date, most investigations of IBLSFs have been performed to elucidate their fundamental properties. Enhanced ferro/piezo-electric properties have been generally discovered in these IBLSFs materials, which are rationally attributed to the quite distinct type of Bi 3+ ionic displacements along the a axis in the Bi 2 O 2 layers arising from the mismatch between the two composed separate units and their respective chemical character.…”