Synthesis and Characterization of Colloidal InP Quantum Rods

Abstract

InP nanorods and nanowires in the diameter range of 30−300 Å and 100−1000 Å in length were synthesized. For the preparation of nanorods, we used an organometallic precursor that decomposes thermally into InP and In metal particles. The latter serves as a nucleation catalyst for the growth of the semiconductor. Quantum rods of zinc blende structure with a high degree of crystallinity are grown along the (111) crystallographic planes. The absorption spectrum of InP nanorods with diameter of about 30 Å and 100−300 Å in length is in the visible spectral regime, suggesting a substantial blue shift with respect to the bulk (band gap 1.35 eV) that is due to size confinement. Moreover, the Stokes shift of the emission band in the quantum rods is substantially larger than the shift in the corresponding quantum dots.

Statistical properties of exciton fine structure splitting and polarization angles in quantum dot ensembles

“…[41,42], which seems to a bit smaller than that in C 2v symmetric QDEs, see Table I. Secondly, the effective model is derived purely from symmetry argument, and is independent of the morphology details of QDs, thus it is also applicable to study the optical properties of other semiconductor nanostructures, e.g., quantum rod and colloid nanocrystals [44][45][46]. As a generic feature, all the physical observations should exhibit some degree of random fluctuations [47].…”

Nanocrystal‐Mediated Crystallization of Silicon and Germanium Nanowires in Organic Solvents: The Role of Catalysis and Solid‐Phase Seeding

“…Si nanowires have been seeded by chemical vapor deposition (CVD) with Ti particles [9] and Ga droplets, [10] and in organic solvents, Si and Ge nanowires were synthesized using Ni nanocrystals. [11,12] Gold alternatives have been explored more extensively for other semiconductors: Sn for ZnO wires, [13] various metal films for vapor-grown tin oxide nanowires, [14] and low-melting metals such as In and Bi for solution synthesis of Group II-VI, [15,16] III-V [17][18][19] and Ge nanowires. [20] Herein, many different nanocrystals-Co, Ni, CuS, Mn, Ir, MnPt 3 , Fe 2 O 3 , and FePt-are explored as seeds for Si and Ge nanowire synthesis to develop a more general understanding of the role of the seed particles in the nanowire growth process.…”

Bismuth Nanocrystal-Seeded III-V Semiconductor Nanowire Synthesis

“…Figure 2 shows SEM and TEM images of InAs and GaP nanowires synthesized in TOP/TOPO with Bi nanocrystals. InAs nanowires were formed through the dehalosilylation reaction between InCl 3 and (SiMe 3 ) 3 As, and GaP nanowires were synthesized by reacting Ga(acac) 3 with (SiMe 3 ) 3 P. Nanowires did not form without Bi nanocrystals. Both InAs and GaP nanowires were obtained with relatively high yield and nanowires ranged between 1 and 10 µm long.…”