2017
Synaptic Suppression Triplet‐STDP Learning Rule Realized in Second‐Order Memristors
Abstract: The synaptic weight modification depends not only on interval of the pre-/ postspike pairs according to spike-timing dependent plasticity (classical pair-STDP), but also on the timing of the preceding spike (triplet-STDP). Triplet-STDP reflects the unavoidable interaction of spike pairs in natural spike trains through the short-term suppression effect of preceding spikes. Second-order memristors with one state variable possessing short-term dynamics work in a way similar to the biological system. In this work,…
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Cited by 258 publications
(183 citation statements)
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“…The different device fabrication methods and electrodes may be responsible for the different memristive behaviors. A similar Schottky barrier based memristive mechanism was reported in our previous work and other literature 22,36,44,48 .…”
Section: Resultssupporting
confidence: 87%
“…The different device fabrication methods and electrodes may be responsible for the different memristive behaviors. A similar Schottky barrier based memristive mechanism was reported in our previous work and other literature 22,36,44,48 .…”
Section: Resultssupporting
confidence: 87%
“…According to the empirical relationship of spike time-related plasticity, the dependence of synaptic weight changes on the Δ t pre-post can be described as follows: G ( Δ t pre‐post ) = { true A + nobreak0em0.25em normalexp ( Δ t pre‐post τ + ) goodbreak0em1em if Δ t normalpre‐post .25em ≥ 0 A − nobreak0em0.25em normalexp ( Δ t pre‐post τ − ) goodbreak0em1em if Δ t normalpre‐post .25em < 0 where A + , τ + and A – , τ – are the scaling factors and time constants for the positive and negative Δ t pre-post , respectively. The calculated results of τ + = 28.5 ms and τ – = −30.8 ms are similar to the time scales of STDP in a typical biological system . The successful implementation of STDP provides a novel working model for the development of neuromorphic systems …”
Section: Resultssupporting
confidence: 67%
“…The continuous tuning of device conductance can be attributed to the modulation of Pt/WO x Schottky barrier height. This mechanism has been partially demonstrated in some previous publications . In our device, the oxygen ions driven by the external field will migrate towards the Pt electrode and further accumulate at the Pt/WO x interfaces, which can downshift the Fermi level near the WO x surface.…”
Section: Resultssupporting
confidence: 61%
