2019
DOI: 10.1016/j.nanoen.2019.103859
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Synaptic silicon-nanocrystal phototransistors for neuromorphic computing

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Cited by 117 publications
(137 citation statements)
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“…e) Implementation of logic functions including “AND” gate and “OR” gate. Reproduced with permission . Copyright 2019, Elsevier B.V.…”
Section: Emerging Materials‐based Synaptic Devicesmentioning
confidence: 99%
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“…e) Implementation of logic functions including “AND” gate and “OR” gate. Reproduced with permission . Copyright 2019, Elsevier B.V.…”
Section: Emerging Materials‐based Synaptic Devicesmentioning
confidence: 99%
“…Boron‐doped Si nanocrystals were also utilized by Yin et al to design optically‐stimulated transistors to emulate demanded essential synaptic functionalities, such as EPSC (IPSC), PPF, STDP, the simulation of aversion learning and the logic functions . Figure a demonstrates the structure of the synaptic phototransistor and boron‐doped Si nanocrystals film, which is served as the channel of the synaptic phototransistor, is about 647 nm thickness.…”
Section: Emerging Materials‐based Synaptic Devicesmentioning
confidence: 99%
“…低能耗是神经突触器件研究中的最具挑战性的性能指标之一. [48,99,100] , 方法 2 只考虑器件在光刺激下的电响应能耗 (图 9(b)) [46,66] , 方法 3 则考虑了光刺激的能量与暗态时电能耗的总和 (图 9(c)) [101] . 究竟哪种计算方法更合理, 目前大家还 没有达成一致.…”
Section: 长程可塑性学习规则unclassified
“…接着, Ni 和 Wang 等 [48] 将这种吸光良好、缺 陷丰富的零维材料 Si NCs 和电荷传输特性优异的二维材料 WSe 2 结合, 制备出了超低能耗 (∼75 fJ) 的杂化光电神经突触器件, 其结构如图 12(h) [48] 所示. 2019 年, Yin 等 [101] 制备了基于掺硼 Si NCs 的晶体管型器件, 该器件同时具备光和电的突触响应, 可以模拟光电耦合刺激下的 STDP 行为. 但由 于制备工艺的不同, 该器件为光抑制型突触特性, 这主要归因于 Si NCs 在光辅助下的氧解吸附过程.…”
Section: 纳米材料如纳米颗粒、纳米线等也是制备神经突触器件的常用材料之一 这类器件的光电突触 特性一般来源于其表面对光生载流子的unclassified
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