2010
DOI: 10.1063/1.3452346
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Surround-gated vertical nanowire quantum dots

Abstract: Heijer, Den, M.; Kouwen, Van, M.P.; Algra, R.; Bakkers, E.P.A.M.; Kouwenhoven, L.P.; Zwiller, V.

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Cited by 10 publications
(8 citation statements)
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References 23 publications
(25 reference statements)
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“…Nanowires are thus versatile and may present a valuable link between "stationary" and "flying" qubits. For instance, similarly to self-assembled QDs [27,57,85,135], voltage-controlled charging and spin-dependent selection rules have been demonstrated on optically active InAsP QDs embedded in InP wires [201][202][203].…”
Section: Quantum Dots In Nanowiresmentioning
confidence: 99%
“…Nanowires are thus versatile and may present a valuable link between "stationary" and "flying" qubits. For instance, similarly to self-assembled QDs [27,57,85,135], voltage-controlled charging and spin-dependent selection rules have been demonstrated on optically active InAsP QDs embedded in InP wires [201][202][203].…”
Section: Quantum Dots In Nanowiresmentioning
confidence: 99%
“…This flexibility in NW design and growth has enabled novel device applications including NW lasers 10,22,23 , light emitting and detection devices 2,[24][25][26] , ultrahigh density transistors 27 single-electron charging devices 28,29 as well as single photon emitters 15,30,31 and detectors 32 .…”
Section: Introductionmentioning
confidence: 99%
“…These quantum structures embedded in NWs allowed single-electron transport 9 , resonant tunneling regime 9 , strong anti-bunching 12 , and exciton spin memory 13 . Moreover, tuning of optically active QDs' charge state using gate voltage has been achieved using these NWs 14 . The GaAs/InAs system as quantum light source, which operated at near-infrared wavelength region, are quite feasible for quantum system on-chip integration with Si based avalanche photo diodes inside Si microchips.…”
Section: Rational Synthesis Of Atomically Thin Quantum Structures In mentioning
confidence: 99%