Summary
In this study, Cd1−xZnxSySe1−y (0 ≤ x = y ≤ 0.35) photoelectrodes are deposited via inexpensive facile chemical bath deposition. The effects of Zn and S doping on the compositional, microstructural, electrical, and optical properties of thin films were analysed. The electrochemical photovoltaic (EPV) cell of configuration Cd1−xZnxSySe1−y/0.25M sulfide/polysulfide/C was assembled to examine the different performance parameters in light and in dark conditions. An EPV cell fabricated with the Cd1−xZnxSySe1−y (0 ≤ x = y ≤ 0.075) photoelectrode exhibited a maximum photoconversion efficiency of 3.18%. This performance can be attributed primarily to the enhanced light‐absorption ability of the material because of the enhanced rough microstructure and low recombination of photo‐injected electrons with the electrolyte. The photovoltaic (PV) performance is significantly enhanced after doping CdSe with Zn and S.