Surface passivation for germanium photovoltaic cells

Posthuma, Niels; Flamand, Giovanni; Geens, Wim; Poortmans, Jef

doi:10.1016/j.solmat.2004.10.005

Cited by 61 publications

(37 citation statements)

References 7 publications

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“…If we can apply these results to Ge surface, although the H 2 exposure treatment and H 2 plasma treatment can terminate c-Ge substrate surface by hydrogen, negative charge sites which cause poor junction properties remain on the c-Ge surface. Although it has been reported that the combination of H 2 plasma treatment and aSi:H deposition could provide excellent passivation for c-Ge [5], the surface oxide of c-Ge was not removed before H 2 plasma treatment. In our study, H 2 plasma damaged the c-Ge surface and degraded solar cell properties because the surface oxide had already been removed by annealing before H 2 plasma treatment.…”

Section: Discussionmentioning

confidence: 99%

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Influence of surface treatments on crystalline germanium heterojunction solar cell characteristics

Nakano

Takeuchi

Kaneko

et al. 2012

Journal of Non-Crystalline Solids

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Section: Discussionmentioning

confidence: 99%

“…Also non-doped a-Si:H has been reported as an excellent material for c-Ge surface passivation [5]. Therefore it is suggested that non-doped a-Si:H can be applied not only to c-Si heterojunction solar cells but also to c-Ge and SiGe alloy heterojunction solar cells to overcome low V OC and poor temperature coefficient.…”

Section: Introductionmentioning

confidence: 99%

Influence of surface treatments on crystalline germanium heterojunction solar cell characteristics

Nakano

Takeuchi

Kaneko

et al. 2012

Journal of Non-Crystalline Solids

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“…Furthermore, it is evident from the simulation results that a moderately low S rear of $10 3 cm/s can effectively alleviate the V oc loss problem. From the practical standpoint, considering the low resistivity of the Ge substrates coupled with the possibility of Ge surface passivation by amorphous Si, 16 the use of a localized back contact scheme can sufficiently reduce the recombination velocity at the rear surface of the Ge cell without compromising the total series resistance.…”

mentioning

confidence: 99%

High-efficiency thin-film InGaP/InGaAs/Ge tandem solar cells enabled by controlled spalling technology

Shahrjerdi¹,

Bedell²,

Ebert³

et al. 2012

Applied Physics Letters

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In this letter, we demonstrate the effectiveness of the controlled spalling technology for producing high-efficiency (28.7%) thin-film InGaP/(In)GaAs/Ge tandem solar cells. The controlled spalling technique was employed to separate the as-grown solar cell structure from the host Ge wafer followed by its transfer to an arbitrary Si support substrate. The structural and electrical properties of the thin-film tandem cells were examined and compared against those on the original bulk Ge substrate. The comparison of the electrical data suggests the equivalency in cell parameters for both the thin-film (spalled) and bulk (non-spalled) cells, confirming that the controlled spalling technology does maintain the integrity of all layers in such an elaborate solar cell structure.

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“…The limiting factor in Ge cells are the low values of open circuit voltage achievable compared to GaSb. Some groups are looking to overcome high recombination rates in Ge solar cells with passivation techniques [15]. Using thin Ge cells as the bottom device in an MSSC could lead to a reduction in the cost of multijunction solar cells.…”

Section: Gaas-ge Msscmentioning

confidence: 99%

Mechanically stacked solar cells for concentrator photovoltaics

Mathews

O’Mahony²,

Yu³

et al. 2011

REPQJ

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Access to the full text of the published version may require a subscription. Item AbstractThe power output of dual-junction mechanically stacked solar cells comprising different sub-cell materials in a terrestrial concentrating photovoltaic module has been evaluated. The ideal bandgap combination of both cells in a stack was found using EtaOpt. A combination of 1.4 eV and 0.7 eV has been found to produce the highest photovoltaic conversion efficiency under the AM1.5 Direct Solar Spectrum with x500 concentration. As EtaOpt does not consider the absorption profile of solar cell materials; the practical power output per unit area of a dual junction mechanically stacked solar cell has been modelled considering the optical absorption co-efficients and thicknesses of the individual solar cells. The model considered a GaAs top cell and a Ge, GaSb, Ga 0.47 In 0.53 As or Si bottom cell. It was found that GaSb gives the highest power contribution as a bottom cell in a dual junction configuration followed by Ge and GaInAs. While the additional power provided by a Si bottom cell is less than these it remains a suitable candidate for a bottom cell owing to its lower cost.

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Surface passivation for germanium photovoltaic cells

Cited by 61 publications

References 7 publications

Influence of surface treatments on crystalline germanium heterojunction solar cell characteristics

Influence of surface treatments on crystalline germanium heterojunction solar cell characteristics

High-efficiency thin-film InGaP/InGaAs/Ge tandem solar cells enabled by controlled spalling technology

Mechanically stacked solar cells for concentrator photovoltaics

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