Surface micromachined tuneable interferometer array

Aratani, Katsuhisa; French, Pim J.; Sarro, P.M.; Poenar, Daniel Puiu; Wolffenbuttel, R.F.; Middelhoek, S.

doi:10.1016/0924-4247(93)00656-o

Cited by 49 publications

(16 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This technique prevents a reduced optical performance that results from the curvature of a simple suspended membrane with a mirror surface at the expense of a higher voltage required to cause a certain deflection at the same membrane area. Beam suspension [55] and corrugations [52] are also used for this purpose. A fabricated microspectrometer is shown in Figure 1.3-25.…”

Section: Fabry-perot-based Microspectrometersmentioning

confidence: 99%

Silicon Photodetectors with a Selective Spectral Response

Wolffenbuttel

2001

Sensors Update

View full text Add to dashboard Cite

Silicon photodetectors with a spectral response defined by design are described. Micromachining technologies in general and two properties of an integrated silicon photodetector in particular are used for that purpose. Firstly, the wavelength dependence of the absorption coefficient is exploited. Secondly, use is made of the fact that a multi-layer interference filter on top of a pn-junction comes with silicon wafer processing.The silicon complex index of refraction, n Ã n À jk, is wavelength dependent in the visible part of the spectrum due to the indirect bandgap at 1.12 eV and the possibility for a direct transition at 3.4 eV, which causes the material to strongly absorb UV light and to almost behave like a transparent material for wavelengths beyond 800 nm. This mechanism enables the design of color sensors and photodiodes with an IR or UV selective response.The transmission of incident light through a surface stack of thin films into the bulk silicon is wavelength dependent. The required compatibility with standard microelectronic processing in silicon limits the range of suitable materials to the silicon-compatible materials conventionally used for integrated circuit fabrication. Accurate data on: crystalline Si, thermally grown SiO 2 , LPCVD polysilicon, silicon nitride (lowstress and stoichiometric) and oxides (LTO, PSG, BSG, BPSG), PECVD oxynitrides and thin-film metals are provided to improve the predictive quality of simulations.In case of a complete microspectrometer, micromachining steps are usually applied for the realization of a dispersion element. Devices operating in the visible or IR spectral range and based on a grating or a Fabry-Perot etalon are presented.

show abstract

Section: Fabry-perot-based Microspectrometersmentioning

confidence: 99%

Silicon Photodetectors with a Selective Spectral Response

Wolffenbuttel

2001

Sensors Update

View full text Add to dashboard Cite

show abstract

“…Our design should at least meet the requirement of such a microprocessor. Several FPI/PD systems using surface micromachining technology have been reported [16][17][18] . However, they operated at only a single wavelength or in a narrow wavelength range.…”

Section: Introductionmentioning

confidence: 99%

Design of a tunable Fabry-Perot interferometer/photodiode (FPI/PD) spectral image sensor in visible wavelength range

Yang

Porod

et al. 2006

SPIE Proceedings

View full text Add to dashboard Cite

The design of a Fabry Perot Interferometer/photodiode (FPI/PD) spectral image sensor in the visible wavelength range using CMOS compatible processes is described. Interdigitated PIN PDs with various geometries were fabricated on Si and tested. The spectral response shows that a quantum efficiency of nearly 80% is achieved by the PD in the visible wavelength range. The quantum efficiency increases with increasing gap-width to pitch-width ratio, and the increase is more significant at shorter wavelengths. The optical performance of FPIs with distributed Bragg reflector mirrors and Ag thin film mirrors are modeled and compared. We find that FPIs with Ag mirrors are more suitable for the applications described here. A transmittance of 0.4 can be achieved using 40 nm Ag mirrors. The effects of the mechanical support of the Ag layer and the PD insulating layer on the transmittance of the FPI are investigated theoretically. After adding the supporting layer or insulating layer, the transmittance changes periodically with the thickness of the respective layers. The changing period and amplitude is a function of the refractive index of the respective layer.

show abstract

“…It does so by requiring a higher voltage to deflect the same membrane area. Beam suspension [1] and corrugations [6] also reduce curvature. Fig.…”

Section: Ieee Instrumentation and Measurement Magazinementioning

confidence: 99%