2018
DOI: 10.1002/adma.201706617
|View full text |Cite
|
Sign up to set email alerts
|

Surface Immobilization of Transition Metal Ions on Nitrogen‐Doped Graphene Realizing High‐Efficient and Selective CO2 Reduction

Abstract: Electrochemical conversion of CO to value-added chemicals using renewable electricity provides a promising way to mitigate both global warming and the energy crisis. Here, a facile ion-adsorption strategy is reported to construct highly active graphene-based catalysts for CO reduction to CO. The isolated transition metal cyclam-like moieties formed upon ion adsorption are found to contribute to the observed improvements. Free from the conventional harsh pyrolysis and acid-leaching procedures, this solution-che… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

12
211
1

Year Published

2018
2018
2022
2022

Publication Types

Select...
9
1

Relationship

0
10

Authors

Journals

citations
Cited by 300 publications
(224 citation statements)
references
References 36 publications
12
211
1
Order By: Relevance
“…ForB i 2 O 3 -NGQDs simulation, we adopted ah eterojunction model composed of single-layer Bi 2 O 3 and NGQDs.T he whole reaction pathway for electrochemical reduction CO 2 to HCOOH is at wo-electron and two-proton transfer process through the OCHO* intermediate and adsorbed HCOOH-(ads). [22] Bi 2 O 3 -NGQDs demonstrates am ore positive DP limit of 1.33 Vt han that of Bi 2 O 3 (À0.35 V; Figure S15), which coincides exactly with the higher formate selectivity observed in experimental results. Both Bi 2 O 3 -NGQDs and Bi 2 O 3 show al argest energy barrier (DG)f or OCHO* formation, demonstrating the initial proton-coupled electron transfer is the potential limiting step,w hich is in good agreement with the result of Tafel analysis.E ncouragingly, after combining with NGQDs,the DG for OCHO* formation decreases from 1.41 eV for Bi 2 O 3 to 0.66 eV for Bi 2 O 3 -NGQDs,whereas the energy barrier for the competitive HER raised from 1.06 eV for Bi 2 O 3 to 1.99 eV for Bi 2 O 3 -NGQDs ( Figure S14).…”
supporting
confidence: 82%
“…ForB i 2 O 3 -NGQDs simulation, we adopted ah eterojunction model composed of single-layer Bi 2 O 3 and NGQDs.T he whole reaction pathway for electrochemical reduction CO 2 to HCOOH is at wo-electron and two-proton transfer process through the OCHO* intermediate and adsorbed HCOOH-(ads). [22] Bi 2 O 3 -NGQDs demonstrates am ore positive DP limit of 1.33 Vt han that of Bi 2 O 3 (À0.35 V; Figure S15), which coincides exactly with the higher formate selectivity observed in experimental results. Both Bi 2 O 3 -NGQDs and Bi 2 O 3 show al argest energy barrier (DG)f or OCHO* formation, demonstrating the initial proton-coupled electron transfer is the potential limiting step,w hich is in good agreement with the result of Tafel analysis.E ncouragingly, after combining with NGQDs,the DG for OCHO* formation decreases from 1.41 eV for Bi 2 O 3 to 0.66 eV for Bi 2 O 3 -NGQDs,whereas the energy barrier for the competitive HER raised from 1.06 eV for Bi 2 O 3 to 1.99 eV for Bi 2 O 3 -NGQDs ( Figure S14).…”
supporting
confidence: 82%
“…d) Schematic illustration of Ni SACs based on an impregnation–adsorption method. Reproduced with permission . Copyright 2018, Wiley‐VCH.…”
Section: Innovative Synthesis Of Sacs On Carbon Substratesmentioning
confidence: 99%
“…In particular, metal‐supported N‐doped carbon (M‐N‐C) composites have shown excellent activity and selectivity for CO production from CO 2 RR . In these M‐N‐C structures, the M‐N 4 (typically Ni‐N 4 ) center is usually proposed to be the possible active site . However, under high‐temperature synthesis conditions of the M‐N‐C catalysts, the resulting materials are likely to form complex structures, such as M‐N x ( x= 1–4), M‐C x , and defects in the carbon matrix, which makes identifying the real active site difficult .…”
Section: Introductionmentioning
confidence: 99%