Surface conductivity and conduction mechanisms on adsorption of vapours on silica

Soffer, Abraham; Folman, M.

doi:10.1039/tf9666203559

Cited by 30 publications

(49 citation statements)

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“…Moreover, the Anderson model forecasts an exponentially decreasing conductivity with increasing surface OH group concentration, whereas the opposite trend was found for the dehydroxilation of kaolinite earlier [135]. Conductivity was found to increase with the dipole moment of the adsorbed species in Vycor-glass [107]. Experimental proof for proton exchange between surface functional groups and adsorbed molecules was obtained in CH 3 OH/SiO 2 [136], water/SBA-15 [137] and various water/ sulphated polystyrene [138] systems.…”

Section: Dependence Of Charge Transport Processes On the Amount Of Admentioning

confidence: 77%

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Atomic scale characterization and surface chemistry of metal modified titanate nanotubes and nanowires

Kukovecz

Kordás

Kiss

2016

Surface Science Reports

102

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Titanates are salts of polytitanic acid that can be synthesized as nanostructures in a great variety concerning crystallinity, morphology, size, metal content and surface chemistry.Titanate nanotubes (open-ended hollow cylinders measuring up to 200 nm in length and 15 nm in outer diameter) and nanowires (solid, elongated rectangular blocks with length up to 1500 nm and 30-60 nm diameter) are the most widespread representatives of the titanate nanomaterial family. This review covers the properties and applications of these two materials from the surface science point of view. Dielectric, vibrational, electron and X-ray spectroscopic results are comprehensively discussed first, then surface modification methods including covalent functionalization, ion exchange and metal loading are covered. The versatile surface chemistry of onedimensional titanates renders them excellent candidates for heterogeneous catalytic, photocatalytic, photovoltaic and energy storage applications, therefore, these fields are also reviewed.

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Section: Dependence Of Charge Transport Processes On the Amount Of Admentioning

confidence: 77%

“…However, the qualitative [107] and quantitative [81] relationship between permittivity and conductivity was found by independent research groups even before this theory. These results indicate that conductivity increases due to the increase in permittivity during the adsorption process.…”

Section: Surface Conducting Mechanismsmentioning

confidence: 99%

Atomic scale characterization and surface chemistry of metal modified titanate nanotubes and nanowires

Kukovecz

Kordás

Kiss

2016

Surface Science Reports

102

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“…Exposure to heavy water and demonstration of the presence of deuterium gas, like in Ref. 23, after stress and recovery of a transistor would provide definite proof.…”

Section: Summary Conclusion and Discussionmentioning

confidence: 99%

“…[23][24][25] It was shown that protons can be produced electrolytically from water on the SiO 2 surface by replacing water in the ambient by heavy water ͑D 2 O͒ and detecting deuterium gas ͑D 2 ͒ after performing surfaceconductivity measurements. 23 Therefore, we suggest that in the above experiments protons are responsible for the time evolution of the potential profiles. Because of the presence of silanol groups ͑SiOH͒ protons will be present on the SiO 2 surface because of the reaction SiOH SiO − +H + , creating an acidic environment.…”

Section: Proton Migration Mechanism For the Bias-stress Effectmentioning

confidence: 99%

Proton migration mechanism for operational instabilities in organic field-effect transistors

et al. 2010

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. (2010). Proton migration mechanism for operational instabilities in organic field-effect transistors. Physical Review B, 82(7), 075322-1/11. [075322]. DOI: 10.1103/PhysRevB.82.075322 DOI:10.1103/PhysRevB.82.075322 Document status and date:Published: 01/01/2010 Document Version:Publisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement: Organic field-effect transistors exhibit operational instabilities involving a shift of the threshold gate voltage when a gate bias is applied. For a constant gate bias the threshold voltage shifts toward the applied gate bias voltage, an effect known as the bias-stress effect. Here, we report on a detailed experimental and theoretical study of operational instabilities in p-type transistors with silicon-dioxide gate dielectric both for a constant as well as for a dynamic gate bias. We associate the instabilities with a reversible reaction in the organic semiconductor in which holes are converted into protons in the presence of water and a reversible migration of these protons into the gate dielectric. We show how redistribution of charge between holes in the semiconductor and protons in the gate dielectric can consistently explain the experimental observations. Furthermore, we show how a shorter period of application of a gate bias leads to a faster backward shift of the threshold voltage when the gate bias is removed. The proposed mechanism is consistent with the observed acceleration of the bias-stress effect with increasing humidity, increasing temperature, and increasing energy of the highest molecular orbital of the org...

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“…It was shown long ago that protons can be produced electrolytically from water on the SiO 2 surface by the replacement of water in the ambient by heavy water ͑D 2 O͒ and the detection of deuterium gas ͑D 2 ͒ after performing surface-conductivity measurements. 18 Since organic semiconductors are permeable to water ͑and also to gasses like oxygen and hydrogen͒, water molecules can also reach the SiO 2 surface in the presence of a semiconducting layer. We propose that the production of protons now takes place throughout the accumulation layer in the semiconductor by electrolysis of water in the presence of holes, effectively converting holes into protons.…”

Section: Proton Migration Mechanism For the Instability Of Organic Fimentioning

confidence: 99%

Proton migration mechanism for the instability of organic field-effect transistors

Sharma

Mathijssen

Kemerink

et al. 2009

Applied Physics Letters

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During prolonged application of a gate bias, organic field-effect transistors show an instability involving a gradual shift of the threshold voltage toward the applied gate bias voltage. We propose a model for this instability in p-type transistors with a silicon-dioxide gate dielectric, based on hole-assisted production of protons in the accumulation layer and their subsequent migration into the gate dielectric. This model explains the much debated role of water and several other hitherto unexplained aspects of the instability of these transistors.

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Surface conductivity and conduction mechanisms on adsorption of vapours on silica

Cited by 30 publications

References 0 publications

Atomic scale characterization and surface chemistry of metal modified titanate nanotubes and nanowires

Atomic scale characterization and surface chemistry of metal modified titanate nanotubes and nanowires

Proton migration mechanism for operational instabilities in organic field-effect transistors

Proton migration mechanism for the instability of organic field-effect transistors

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