2016
DOI: 10.1016/j.chemphys.2015.11.004
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Surface and interface effects on non-radiative exciton recombination and relaxation dynamics in CdSe/Cd,Zn,S nanocrystals

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Cited by 16 publications
(22 citation statements)
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“…In doing so, transient decay traces depend on the pump pulse fluence (all set of data SI2, Figure S2 ). The dependence of transient decay kinetics on the pump fluence due to the process of the multiexciton recombination and surface trapping was reported previously [ 1 , 21 , 28 , 29 , 31 , 35 ].…”
Section: Resultssupporting
confidence: 57%
“…In doing so, transient decay traces depend on the pump pulse fluence (all set of data SI2, Figure S2 ). The dependence of transient decay kinetics on the pump fluence due to the process of the multiexciton recombination and surface trapping was reported previously [ 1 , 21 , 28 , 29 , 31 , 35 ].…”
Section: Resultssupporting
confidence: 57%
“…We showed that there is a XX SS as well . This electronic structure of X and XX governs the gain threshold, as illustrated in Figure . , …”
supporting
confidence: 54%
“…[31][32][33] Hole trapping states also affect the AR lifetimes by altering the electronhole interactions and, therefore, significantly impacting the kinetic competition between hole transfer and AR dynamics. [34][35][36] Ultrafast transient absorption (TA) spectroscopy provides the time resolution required to directly track the population of holes in different states as they have established that phenothiazine derivatives can serve as a class of hole acceptors for CdS QDs or nanorods with both the high driving force and the necessary optical signature in TA to track hole transfer. 31,37,38 In these model systems, ultrafast hole trapping was observed within ~1 ps following photo-excitation, and trap-mediated hole transfer dynamics were investigated under single-excitonic or bi-excitonic conditions.…”
Section: Introductionmentioning
confidence: 99%
“…For metal chalcogenide QDs, hole trap states are prevalent on the surface due to underpassivated chalcogenide atoms. , The multitude of these relatively localized hole traps play an important role in mediating hole transfer from delocalized valence band (VB) states to surface bound acceptors. Hole-trapping states also affect the AR lifetimes by altering the electron–hole interactions and, therefore, significantly impacting the kinetic competition between hole transfer and AR dynamics. Ultrafast transient absorption (TA) spectroscopy provides the time resolution required to directly track the population of holes in different states as they migrate from QDs to acceptors. Previous works with TA methods by Lian et al and Weiss et al have established that phenothiazine derivatives can serve as a class of hole acceptors for CdS QDs or nanorods with both the high driving force and the necessary optical signature in TA to track hole transfer. ,, In these model systems, ultrafast hole trapping was observed within ∼1 ps following photoexcitation, and trap-mediated hole-transfer dynamics were investigated under single-excitonic or biexcitonic conditions.…”
Section: Introductionmentioning
confidence: 99%