Surface analysis of reactive ion-etched InP

Abstract

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X-ray photoelectron spectroscopy analysis of the effect of temperature upon surface composition of InP etched in Cl2-based inductively coupled plasma

“…16 and Bae et al 17 used ex-situ XPS to characterize the surface of InP samples etched with HBr/Ar and Cl 2 /Ar inductively coupled plasmas, respectively, and reported the presence of InBr x and InCl x products in the In 3d core level spectrum, as well as a significant reduction of peak intensity in the P 2p core level spectrum. On the other hand, some ex-situ XPS surface analysis conducted for Cl 2 -based capacitively coupled reactive ion etching (CCP-RIE) 18 and various electron cyclotron resonance (ECR) or ICP etching chemistries including Cl 2 , 19,20 Cl 2 /CH 4 /H 2 , 20 or HBr/O 2 9 gas mixtures have shown that a P-rich surface can also be obtained, but the origin of P enrichment was not identified. Phosphorus enrichment was also reported after chemical cleaning/etching of InP.…”

Etching of GaAs/AlGaAs rib waveguide structures using BCl3/Cl2/N2/Ar electron cyclotron resonance

“…A sidewall polymer creating gas such as CH 4 or SiCl 4 ͑the latter in conjunction with a photoresist mask͒ is added to prevent undercutting, and other gases such as H 2 may be added to optimize the surface morphology and stoichiometry. 13,[22][23][24][25][26][27][28][29][30][31] Similar work needs to be performed for the GaAs/AlGaAs system. While Cl 2 -containing plasma chemistries are generally employed for GaAs, there has been little investigation into optimizing the etching under high microwave power conditions in the type of electron cyclotron resonance ͑ECR͒ single-wafer reactors now finding increasing application in III-V device technology.…”

A study of electrically active defects created in p-InP by CH4:H2 reactive ion etching

“…1 On InP, it was shown that RIE can produce a change of surface stoichiometry ͑depletion of P͒. [2][3][4] Also, passivation of dopant elements by hydrogen was reported. 4,5 However, extended systematic studies of deep-level defects created by RIE are still scarce.…”