Suppression of the metal-insulator transition temperature in thin La0.7Sr0.3MnO3 films

Abstract

In this paper, we illustrate an approach to discriminate between\ud epitaxial strain and other factors responsible for the decrease of the\ud metal-insulator transition temperature (T-P) in thin La0.7Sr0.3MnO3\ud films grown by pulsed laser deposition. Using this approach, we have\ud estimated the effect of the biaxial strain on T-P. Ultrathin films,\ud independent of epitaxial strain, do not show any metal-insulator\ud transition over the full temperature range. This finding confirms the\ud existence of an interface dead layer. The strain-independent decrease in\ud T-P, relative to its bulk value, observed for a much wider thickness\ud range (up to about 1000 A) can most likely be attributed to oxygen\ud deficiency. (C) 2004 American Institute of Physics

Mn55NMR and magnetization studies ofLa0.67Sr0.33Sidorenko1, Allodi2, Renzi3 et al. 2006Phys. Rev. BSelf Cite283191View full textAdd to dashboardCite

“…The ob- Similar measurements were performed on our films; they confirm the presence of a critical thickness of this order of magnitude. 4 Figure 2(b) shows the thickness dependence of the applied rf field h required to optimally excite the f DE NMR resonance. The reduction of h with increasing film thickness indicates an increase of the experimental enhancement factor η = h/h 0 , as given by Eq.…”

“…Deposition conditions, structural characterization and transport properties have been described elsewhere. 4 It should be mentioned here that the annealing duration for optimal oxygen content was found to vary with film thickness: two hours for thicker films and half an hour and less for thinner films.…”

“…In the manganite films, the substrate-induced strain affects magnetoresistivity, 1,2,3 Curie temperature, 4 and magnetic microstructure 5,6 . In particular, the magnetic anisotropy energy in the thin manganite films strongly depends on strain and, therefore, on the substrate material, film thickness, and deposition parameters.…”

Effect of biaxial strain on the electrical and magnetic properties of (001) La0.7Sr0.3MnO3 thin films

“…[6][7][8][9][10][11][12][13][14][15][16] In this work, we investigate the magnetotransport properties of fully commensurate epitaxial La 0.7 Sr 0.3 MnO 3 thin films grown by reactive molecular-beam epitaxy. Our films span a biaxial strain range from Ϫ2.3% to +3.2%, and we find excellent agreement between the measured Curie temperatures and the model of Millis et al 5 The films were grown on nine commercially available perovskite substrates: ͑100͒ p LaAlO 3 , ͑001͒ LaSrGaO 4 , ͑110͒ NdGaO 3 , ͑100͒ ͑LaAlO 3 ͒ 0.3 -͑SrAl 0.5 Ta 0.5 O 3 ͒ 0.7 ͑LSAT͒, ͑100͒ SrTiO 3 , ͑110͒ DyScO 3 , ͑110͒ GdScO 3 , ͑110͒ SmScO 3 , and ͑110͒ NdScO 3 , where the subscript p indicates pseudocubic indices.…”

Near-room-temperature refrigeration through voltage-controlled entropy change in multiferroics

“…25 Thiele et al have shown that voltagecontrolled epitaxial strain in LSMO is possible when exploiting the inverse piezoelectric effect of Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 (001) (PMN-PT) substrates. 26 They report on voltage-controlled changes of the Curie temperature in a LSMO film of 20 nm thickness between 278 K and 297 K. Fig.…”