Abstract:The electrical characteristics of FinFETs with a crystalline ZrO 2 /Al 2 O 3 buffer layer gate stack and a crystalline ZrO 2 high-K dielectric single layer, along with different fin widths and gate lengths, are investigated. Compared with the FinFETs with a single layer of crystalline ZrO 2 high-K dielectric, the gate stack comprising the crystalline ZrO 2 /Al 2 O 3 buffer layer on FinFETs leads to the suppression of short channel effects in terms of a low drain induced barrier lowering, reduced threshold volt… Show more
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