Suppression of microwave rectification effects in electrically detected magnetic resonance measurements

Lo, C. C.; Bradbury, F. R.; Tyryshkin, Alexei M.; Weis, Christoph; Bokor, Jeffrey; Schenkel, T.; Lyon, S. A.

doi:10.1063/1.3684247

Cited by 7 publications

(7 citation statements)

References 28 publications

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“…After stripping the e-beam resist, both sets of devices were metallized with 300 nm of thermally evaporated Al over the source/drain and n + poly-Si gate. Al was evaporated over the gate to avoid loading the ESR resonator by the resistive poly-silicon [25] and to accelerate the passivation of interface defects. [26] Thermal evaporations were chosen over e-beam evaporations in this process as the latter method creates X-rays that can further damage the Si/SiO 2 interface.…”

mentioning

confidence: 99%

Annealing shallow Si/SiO2 interface traps in electron-beam irradiated high-mobility metal-oxide-silicon transistors

Kim

Tyryshkin

Lyon

2017

Applied Physics Letters

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Electron-beam (e-beam) lithography is commonly used in fabricating metal-oxide-silicon (MOS) quantum devices but creates defects at the Si/SiO2 interface. Here we show that a forming gas anneal is effective at removing shallow defects (≤ 4 meV below the conduction band edge) created by an e-beam exposure by measuring the density of shallow electron traps in two sets of highmobility MOS field-effect transistors (MOSFETs). One set was irradiated with an electron-beam (10 keV, 40 µC/cm 2 ) and was subsequently annealed in forming gas while the other set remained unexposed. Low temperature (335 mK) transport measurements indicate that the forming gas anneal recovers the e-beam exposed sample's peak mobility (14,000 cm 2 /Vs) to within a factor of two of the unexposed sample's mobility (23,000 cm 2 /Vs). Using electron spin resonance (ESR) to measure the density of shallow traps, we find that the two sets of devices are nearly identical, indicating the forming gas anneal is sufficient to anneal out shallow defects generated by the e-beam exposure. Fitting the two sets of devices' transport data to a percolation transition model, we extract a T=0 percolation threshold density in quantitative agreement with our lowest temperature ESR-measured trap densities.

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confidence: 99%

Annealing shallow Si/SiO2 interface traps in electron-beam irradiated high-mobility metal-oxide-silicon transistors

Kim

Tyryshkin

Lyon

2017

Applied Physics Letters

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“…2(c)) diminishes the achievable oscillation amplitudes. We also found increased significance of microwave rectification effects at low bias electric fields; improved sample designs optimized for microwave resonator-based ESR measurements can be used to reduce such detrimental rectification effects [22], and allow high microwave power pulsed ESR measurements to be performed on the devices.…”

Section: Channel Detectormentioning

confidence: 82%

Microwave Manipulation of Electrically Injected Spin-Polarized Electrons in Silicon

Appelbaum

et al. 2014

Phys. Rev. Applied

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We demonstrate microwave manipulation of the spin states of electrically injected spin-polarized electrons in silicon. Although the silicon channel is bounded by ferromagnetic metal films, we show that moderate microwave power can be applied to the devices without altering the device operation significantly. Resonant microwave irradiation is used to induce spin rotation of spinpolarized electrons as they travel across a silicon channel, and the resultant spin polarization is subsequently detected by a ferromagnetic Schottky barrier spin detector. These results demonstrate the potential for combining advanced electron spin resonance techniques to complement the study of semiconductor spintronic devices beyond standard magnetotransport measurements.

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“…It was successfully applied to a wide variety of material systems, ranging from inorganic to organic semiconductors and to devices such as thin film solar cells or transistors. [1][2][3][4][5][6][7] One of the major advantages of EDMR compared to conventional electron spin resonance (ESR) is its higher sensitivity. A systematic study of the sensitivity of continuous wave EDMR (cwEDMR) at liquid helium temperature using phosphorus-doped silicon samples has shown that at present cwEDMR is able to detect as few as 100 spins.…”

Section: Introductionmentioning

confidence: 99%

The electrically detected magnetic resonance microscope: Combining conductive atomic force microscopy with electrically detected magnetic resonance

Klein

Hauer

Stoib

et al. 2013

Review of Scientific Instruments

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We present the design and implementation of a scanning probe microscope, which combines electrically detected magnetic resonance (EDMR) and (photo-)conductive atomic force microscopy ((p)cAFM). The integration of a 3-loop 2-gap X-band microwave resonator into an AFM allows the use of conductive AFM tips as a movable contact for EDMR experiments. The optical readout of the AFM cantilever is based on an infrared laser to avoid disturbances of current measurements by absorption of straylight of the detection laser. Using amorphous silicon thin film samples with varying defect densities, the capability to detect a spatial EDMR contrast is demonstrated. Resonant current changes as low as 20 fA can be detected, allowing the method to realize a spin sensitivity of 8×10(6)spins/√Hz at room temperature.

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Suppression of microwave rectification effects in electrically detected magnetic resonance measurements

Cited by 7 publications

References 28 publications

Annealing shallow Si/SiO2 interface traps in electron-beam irradiated high-mobility metal-oxide-silicon transistors

Annealing shallow Si/SiO2 interface traps in electron-beam irradiated high-mobility metal-oxide-silicon transistors

Microwave Manipulation of Electrically Injected Spin-Polarized Electrons in Silicon

The electrically detected magnetic resonance microscope: Combining conductive atomic force microscopy with electrically detected magnetic resonance

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