2006
DOI: 10.1103/physrevb.73.085205
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Abstract: The narrow gap semiconductor FeSi owes its strong paramagnetism to electron-correlation effects. Partial Co substitution for Fe produces a spin-polarized doped semiconductor. The spin polarization causes suppression of the metallic reflectivity and increased scattering of charge carriers, in contrast to what happens in other magnetic semiconductors, where magnetic order reduces the scattering. The loss of metallicity continues progressively even into the fully polarized state, and entails as much as a 25% red…

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