volume 135, issue 3, P228-230 2006
DOI: 10.1016/j.mseb.2006.08.011
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Abstract: Strained silicon on insulator (SSOI) technology has emerged as an attractive option for the introduction of wafer-scale strain into upcoming CMOS technology nodes. Two key breakthroughs which have made this possible are discussed in this paper. First, the development of SSOI without a SiGe layer in the final wafer has eliminated significant CMOS process integration challenges. Second, the discovery that strained films well in excess of the critical thickness can be used for SOI MOSFETs has paved the way for a…

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