2021
DOI: 10.1088/0256-307x/38/8/086301
|View full text |Cite
|
Sign up to set email alerts
|

Superconductivity in Shear Strained Semiconductors

Abstract: Semiconductivity and superconductivity are remarkable quantum phenomena that have immense impact on science and technology, and materials that can be tuned, usually by pressure or doping, to host both types of quantum states are of great fundamental and practical significance. Here we show by first-principles calculations a distinct route for tuning semiconductors into superconductors by diverse large-range elastic shear strains, as demonstrated in exemplary cases of silicon and silicon carbide. Analysis of st… Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

0
5
0

Year Published

2022
2022
2024
2024

Publication Types

Select...
10

Relationship

3
7

Authors

Journals

citations
Cited by 18 publications
(5 citation statements)
references
References 82 publications
0
5
0
Order By: Relevance
“…Such nonhydrostatic stresses are capable of driving distinct structural and property changes in the sample, leading to unexpected material behaviors. Pertinent examples include stress-induced ductile flow, metallization and superconductivity of normally superhard, brittle, and electrically insulating diamond, , stress-driven metallization and superconductivity of semiconductors silicon and silicon carbide, stress-modulated superconductivity in superhydride H 3 S, and stress-promoted electronic bandgap closure and resulting metallization of solid molecular hydrogen at reduced pressures compared to the hydrostatic case . These results showcase the prominent role of nonhydrostatic stresses in generating structural forms and physical properties not seen under hydrostatic conditions; consequently, materials research under extreme compression to ultrahigh megabar pressures needs to consider the influence of such deviatoric stresses beyond the hydrostatic description and examine their effects on physical properties.…”
Section: Introductionmentioning
confidence: 85%
“…Such nonhydrostatic stresses are capable of driving distinct structural and property changes in the sample, leading to unexpected material behaviors. Pertinent examples include stress-induced ductile flow, metallization and superconductivity of normally superhard, brittle, and electrically insulating diamond, , stress-driven metallization and superconductivity of semiconductors silicon and silicon carbide, stress-modulated superconductivity in superhydride H 3 S, and stress-promoted electronic bandgap closure and resulting metallization of solid molecular hydrogen at reduced pressures compared to the hydrostatic case . These results showcase the prominent role of nonhydrostatic stresses in generating structural forms and physical properties not seen under hydrostatic conditions; consequently, materials research under extreme compression to ultrahigh megabar pressures needs to consider the influence of such deviatoric stresses beyond the hydrostatic description and examine their effects on physical properties.…”
Section: Introductionmentioning
confidence: 85%
“…Elastic constants were calculated using the strain–stress method, and elastic moduli were derived from the Voigt-Reuss-Hill averaging scheme. Stress–strain relations under shear and compressive loading conditions were determined using the well-developed method. At each step, a fixed strain was applied with a strain increment of 0.01, and the corresponding stress was determined. Moreover, the other five components of the Hellmann–Feynman stress tensors and atoms inside the unit cell were simultaneously relaxed until the residual forces and stresses were less than 0.005 eV/Å and 0.1 GPa, respectively.…”
Section: Methodsmentioning
confidence: 99%
“…The chemical bonding properties were quantitatively described with the Crystal orbital Hamilton populations (COHPs) as implemented in the LOBSTER program . The quasistatic ideal strength and relaxed loading path were determined using the established stress–strain method in which the lattice vectors were incrementally deformed along the direction of the applied (tensile or shear) strains. At each step, the applied (tensile or shear) strain was fixed to determine the tensile or shear stress, while the other five independent components of the strain tensors as well as all the atoms inside the unit cell were simultaneously relaxed until (i) all the residual components of the Hellmann–Feynman stress tensor that were orthogonal to the applied strain were <0.1 GPa and (ii) the force on each atom became negligible.…”
Section: Methodsmentioning
confidence: 99%