Sulphur-Doped Copper(I) Iodide as Record Figure of Merit P-Type Transparent Conductor

Mirza, Asif; Pols, Mike; Soltanpoor, Wiria; Tao, Shuxia; Brocks, G.; Morales‐Masis, Monica

doi:10.2139/ssrn.4450373

Cited by 1 publication

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“…The sulfur deficiency was then compensated by adding an excess of elemental sulfur to the antiperovskite powder with a molar ratio of 3:1 before target pressing (see the Supporting Information for more details, Figure S10). Excess sulfur in the PLD target to compensate for its loss due to its high volatility was also reported previously for CuI/S . Thin films deposited with these sulfur-rich targets were studied by EDX, and a sulfur excess was observed (Table ).…”

Section: Resultssupporting

confidence: 69%

“…Excess sulfur in the PLD target to compensate for its loss due to its high volatility was also reported previously for CuI/S. 45 Thin films deposited with these sulfur-rich targets were studied by EDX, and a sulfur excess was observed (Table 2). Samples were then annealed at 200 °C for 30 min in a nitrogen atmosphere and then measured once again by EDX.…”

Section: Pulsed Laser Deposition Of Ag 3 Si Thin Filmssupporting

confidence: 70%

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Chalcohalide Antiperovskite Thin Films with Visible Light Absorption and High Charge-Carrier Mobility Processed by Solvent-Free and Low-Temperature Methods

et al. 2023

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Silver chalcohalide antiperovskites represent a rather unexplored alternative to lead halide perovskites and other semiconductors based on toxic heavy metals. All synthetic approaches reported so far for Ag3SI and Ag3SBr require long synthesis times (typically days, weeks, or even months) and high temperatures. Herein, we report the synthesis of these materials using a fast and low-temperature method involving mechanochemistry. Structural and optical properties are examined experimentally and supported by first-principles calculations. Furthermore, we deposit Ag3SI as thin films by pulsed laser deposition and characterize its optoelectronic properties using optical-pump-terahertz-probe measurements, revealing a high charge-carrier mobility of 49 cm2 V–1 s–1. This work paves the way to the implementation of chalcohalide antiperovskites in various optoelectronic applications.

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Section: Resultssupporting

confidence: 69%

Section: Pulsed Laser Deposition Of Ag 3 Si Thin Filmssupporting

confidence: 70%