Sulfonic Zwitterion for Passivating Deep and Shallow Level Defects in Perovskite Light‐Emitting Diodes

Abstract

Chemical passivation via functional additives plays a critical role in achieving high performance perovskite light‐emitting diodes (PeLEDs). Here, perovskite composite films for high performance PeLEDs by using zwitterion 3‐aminopropanesulfonic acid (APS) as the additive are developed. The sulfonic group of APS can simultaneously passivate deep and shallow level defects in perovskites via coordinate and hydrogen bonding, which leads to suppressed non‐radiative recombination and ion migration in the perovskite composite films. Based on this, PeLEDs with a peak external quantum efficiency of 19.2% and a half‐lifetime of 43 h at a constant current density of 100 mA cm−2 are obtained, representing one of the most stable and efficient PeLEDs under high current densities.

Understanding and minimizing non-radiative recombination losses in perovskite light-emitting diodes

“…The sulfonic group of zwitterion 3-aminopropanesulfonic acid (APS) can simultaneously passivate deep and shallow level defects in perovskites via coordinate and hydrogen bonding, which improve the EQE from 9% to 19.2%. 105 In summary, these additives can be classified as organic and inorganic, which can passivate shallow defects and even deep level defects. 4,20…”

“…The sulfonic group of zwitterion 3-aminopropanesulfonic acid (APS) can simultaneously passivate deep and shallow level defects in perovskites via coordinate and hydrogen bonding, which improve the EQE from 9% to 19.2%. 105 In summary, these additives can be classified as organic and inorganic, which can passivate shallow defects and even deep level defects. 4,20 Apart from the prevalent method of additive engineering, other methods are also developed to remove defects, which include vapor-assisted crystallization technique, 106,107 doping metal ions (Rb), 107 cross linked strategy, 28 and so forth.…”

Core–shell carbon-polymer quantum dot passivation for near infrared perovskite light emitting diodes

“…EQE was measured to be 6% and 9% for the FAPbI 3 coated on the pristine and BDP modified SnO 2 ETL, respectively, which was increased to 10% and 14% for the PCD PeLEDs based on the SnO 2 and SnO 2 /BDP substrates, respectively (figure 7(d)). Table 1 provides a detailed comparison on the current advancement in the FAPbI 3 perovskites PeLEDs concluding the performance of our device and recent state-of-the-art PeLEDs [43][44][45][46][47][48][49][50][51][52][53][54]. The optimized devices also showed reduced efficiency roll-off compared to the reference with no modification and additive (figure 7(d)).…”

Additive-associated antisolvent engineering of perovskite films for highly stable and efficient p–i–n perovskite solar cells

“…These results are consistent with previous investigations showing that Lewis bases/acids can both slow down the annealing process. 30…”

“…These results are consistent with previous investigations showing that Lewis bases/acids can both slow down the annealing process. 30 The surface morphology of perovskite films was employed to compare the effect of NAE and AAE on the crystallization. As shown in Fig.…”