Suitability of SnS thin films for photovoltaic application due to the existence of persistent photocurrent

Gupta, Yashika; Arun, P.

doi:10.1002/pssb.201552249

Cited by 23 publications

(9 citation statements)

References 53 publications

(80 reference statements)

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“…However, X‐ray diffractogram corresponding to 1175 nm showed a drastic decrease in X‐ray peak intensities. This decrease in XRD peak intensities could be due to the change in crystal orientation or grain morphology in SnS thin films expected in films of this thickness based on our observations reported earlier . SnS films showed crystallinity with crystallite sizes in the nanoregime (≈20–30 nm).…”

Section: Resultssupporting

confidence: 75%

“…This decrease in XRD peak intensities could be due to the change in crystal orientation or grain morphology in SnS thin films expected in films of this thickness based on our observations reported earlier. [21] SnS films showed crystallinity with crystallite sizes in the nanoregime (≈20-30 nm). Within experimental error, we may consider that there is small or negligible variation in crystallite size with film thickness.…”

Section: Structural Analysismentioning

confidence: 99%

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Mitigating Reasons for the Poor Performance of n‐CdS/p‐SnS Solar Cells

Gupta

Kant²,

Palakkandy

2018

Global Challenges

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In the present work, indium tin oxide (ITO)/n‐CdS/p‐SnS/Au structured solar cells are fabricated with best conversion efficiency of 0.005%. A detailed investigation is made into the cause of the poor conversion efficiency and the cause is narrowed down to defects in p‐SnS which effect the junction and the neutral region of the cell. The junctions performance is quantified using the ideality factor which is found to be related to the band misalignment. The paper also investigates into literature and discusses efforts made to overcome the problems with this structure.

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Section: Resultssupporting

confidence: 75%

Section: Structural Analysismentioning

confidence: 99%

Mitigating Reasons for the Poor Performance of n‐CdS/p‐SnS Solar Cells

Gupta

Kant²,

Palakkandy

2018

Global Challenges

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“…9B) also confirms the effect of Urbach tail defects on the optical behavior of the as grown p-SnS films (over a larger wavelength region). These results validate our persistent photocurrent (PPC) results [12] where thinner samples showed a single exponential decay curve due to small width of levels while as the width increased, multiple transition levels appeared and a non-exponential decay curve was observed.…”

Section: Refractive Indexsupporting

confidence: 88%

Influence of Urbach tail on the refractive index of p‐SnS thin films

Gupta

Arun

2016

Phys. Status Solidi C

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Tin sulphide thin films of p‐type conductivity were grown on glass substrates. The refractive index of the as grown films were calculated using both transmission and spectroscopic ellipsometry (SE) data. The SE data was fit using Tauc Lorentz model which showed that the films did not absorb for λ > 700 nm. The variation in all the films refractive index with respect to wave‐ length, i.e. the dispersion behaviour of the films in region 700 < λ < 1000 nm were found to follow the Wemple‐Dedomenico (WDD) single oscillator model. The optical properties of the films were found to be closely related to the structural properties of the films. Intrinsic crystal disorders, tin vacancies in p‐SnS thin films leads to ap‐ pearance of defect levels (Urbach tail) within the band‐ gap. The band‐gap and the band tail's spread, intimately controls the refractive index of the films.

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An Innovative Postdeposition Annealing Approach Producing Centimeter‐Scale In₂O₃/In₂(TeO₃)₃ Bulk Heterojunction Thin Film for Room‐Temperature Persistent Photoconductivity

Yao

Zheng

Yang

2017

Advanced Optical Materials

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extensive applications such as optoelectronic memory, [1,2] light-enhanced gas sensing, [3][4][5] imaging, [6] photocatalysis, [7,8] photovoltaics, [9,10] and radiation detection. [11] However, thus far, the majority of researchers focus on the conventional rapid photoswitching, [12][13][14][15][16] while PPC phenomena have attracted much less attention. Traditionally, PPC phenomena were commonly found in nanomaterial-based devices with large surface to volume ratio, [2,[17][18][19][20][21] in which the spontaneous surface potential spatially separated the photogenerated electron-hole pairs. As a result, after the termination of the photoexcitation, these nonequilibrium carriers can still cycle across the transport channel for an extended time before their recombination, leading to the persistent photocurrent. However, the low-dimensional geometry of nanomaterials still poses great challenges to the implementation of integrated devices with a large amount of arrayed functional optoelectronic units on account of their extremely low maneuverability. Recently, by gating 2D layered flakes with back-toback Schottky electrodes, potential wells separating photogenerated carriers were formed and persistent photoconductivity was achieved. [6] However, the large gate voltage up to tens of volts may cause unpredictable danger, unrepairable device damage as well as high energy consumption, which seriously hamper their widely commercial applications. On the other hand, PPC phenomena have also been commonly observed in semiconductor-based heterostructure systems. [22][23][24][25] However, the functional portions of these devices are limited to the heterointerface and its adjacent portions. Therefore, traditional double-layered heterostructures can cause a waste of materials. Additionally, these traditional heterostructures based on thick layers suffer rigidity. Thus, they are unavailable for flexible and wearable devices, limiting their adaptability to various working environments. Moreover, well-engineered heterointerface with specific terminal lattice plane is often proposed to be essential for the occurrence of PPC, [22,23,26,27] which adds additional processing cost and complexity in device implementation.Persistent photoconductivity holds great significance to a variety of interesting applications. However, persistent photoconductivity devices based on large-scale thin films produced by a facile and efficient technology have rarely been achieved so far. In this work, centimeter-scale In 2 O 3 /In 2 (TeO 3 ) 3 bulk heterojunction thin films are prepared via an innovative and convenient two-step approach, an initial pulsed-laser deposition followed by a postdeposition annealing process. A prototype optoelectronic device is fabricated and it exhibits pronounced persistent photoconductivity with positive dependence on both the source-drain voltage and incident power density. This device also shows photoresponse to incident light with wavelengths from ultraviolet to red, revealing great potential for practical device applicati...

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Suitability of SnS thin films for photovoltaic application due to the existence of persistent photocurrent

Cited by 23 publications

References 53 publications

Mitigating Reasons for the Poor Performance of n‐CdS/p‐SnS Solar Cells

Mitigating Reasons for the Poor Performance of n‐CdS/p‐SnS Solar Cells

Influence of Urbach tail on the refractive index of p‐SnS thin films

An Innovative Postdeposition Annealing Approach Producing Centimeter‐Scale In₂O₃/In₂(TeO₃)₃ Bulk Heterojunction Thin Film for Room‐Temperature Persistent Photoconductivity

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Suitability of SnS thin films for photovoltaic application due to the existence of persistent photocurrent

Cited by 23 publications

References 53 publications

Mitigating Reasons for the Poor Performance of n‐CdS/p‐SnS Solar Cells

Mitigating Reasons for the Poor Performance of n‐CdS/p‐SnS Solar Cells

Influence of Urbach tail on the refractive index of p‐SnS thin films

An Innovative Postdeposition Annealing Approach Producing Centimeter‐Scale In2O3/In2(TeO3)3 Bulk Heterojunction Thin Film for Room‐Temperature Persistent Photoconductivity

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An Innovative Postdeposition Annealing Approach Producing Centimeter‐Scale In₂O₃/In₂(TeO₃)₃ Bulk Heterojunction Thin Film for Room‐Temperature Persistent Photoconductivity