1999
DOI: 10.1021/la981426i
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Substrate Effects on the Formation of Alkylsiloxane Monolayers

Abstract: Submonolayers of octadecylsiloxane (ODS) were prepared by adsorption from dilute solutions of octadecyltrichlorosilane (OTS) onto a series of different substrates: mica, native silicon (Si/SiO2), and mica coated with a defined number nSiO of SiO2 monolayers (nSiO ) 1, 2, 4, 6). Atomic force microscopy (AFM) was used to investigate the adsorption rate and the submonolayer island morphology as a function of the substrate composition. Two types of substrate effects were observedsfirst, an abrupt change of the sha… Show more

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Cited by 75 publications
(78 citation statements)
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“…[38,39] Such compensation would reduce repulsion between electrostatic charges on the semiconductor surface during adsorption due to MoL binding groups. [40] Since pinhole separation increases as monolayer coverage increases, [41] Based on these observations and on the interfacial dipole model, [14] we deduce that the electrostatic influence of the molecular dipole domains in the heavily doped samples affects the entire (semiconductor region below the) pinhole areas and the electronic transport through them in a relatively uniform fashion. Since tunneling through Au/dC±X/GaAs contacts is less favorable than transport through the pinholes, [5,13] the I±V results of the heavily doped samples reflect only transport through the latter.…”
mentioning
confidence: 88%
“…[38,39] Such compensation would reduce repulsion between electrostatic charges on the semiconductor surface during adsorption due to MoL binding groups. [40] Since pinhole separation increases as monolayer coverage increases, [41] Based on these observations and on the interfacial dipole model, [14] we deduce that the electrostatic influence of the molecular dipole domains in the heavily doped samples affects the entire (semiconductor region below the) pinhole areas and the electronic transport through them in a relatively uniform fashion. Since tunneling through Au/dC±X/GaAs contacts is less favorable than transport through the pinholes, [5,13] the I±V results of the heavily doped samples reflect only transport through the latter.…”
mentioning
confidence: 88%
“…Afterwards, the substrates are exposed to UV/ozone. 12 This exposure results in the addition of polar oxygen atoms and an increase in the surface energy of the native silicon oxide surface through the breaking of the molecular bonds. The silicon oxide thereby is reduced to a layer thickness of ¾1.5 nm and the concentration of the OH groups increases.…”
Section: Sample Preparationmentioning
confidence: 99%
“…The exact state of mechanism behind the chemical bonding of OTS on a surface is still debatable. The formation of OTS monolayer on a material surface is highly sensitive to several factors, which include (a) the density of surface hydroxyl groups [32]; (b) reaction temperature [29,33]; (c) reaction environment [34,35]; (d) reaction time [34]; (e) solvent used to deposit OTS [35,36]; (f) water content of the solvent [33]; (g) concentration of OTS [35,37]; (h) solution age [38]; (i) roughness of the underlying substrate [39]; and (j) cleaning procedures after SAM deposition [40].…”
Section: Introductionmentioning
confidence: 99%