Substrate-dependent crystallization and enhancement of visible photoluminescence in thermal annealing of Si/SiO2 superlattices

Abstract

Articles you may be interested inPhotoluminescence properties and crystallization of silicon quantum dots in hydrogenated amorphous Si-rich silicon carbide films

Influence of a substrate, structure and annealing procedures on crystalline and optical properties of Si/SiO2 multiple quantum wells

“…A blue-shift in the peak position was observed upon decreasing of the layer thickness instead of the theoretically predicted red-shift. Similar results for analogous samples were reported previously [4,13,14]. It was also shown [13] that full width at half maximum (FWHM) of the Si Raman peak is barely influenced by compressive stress, although the spectral position of the peak maximum is strongly blue-shifted.…”

“…Similar results for analogous samples were reported previously [4,13,14]. It was also shown [13] that full width at half maximum (FWHM) of the Si Raman peak is barely influenced by compressive stress, although the spectral position of the peak maximum is strongly blue-shifted. Presence of the stress and possibilities of its relaxation by laser annealing were reported also in [9].…”

Effect of post-annealing in oxygen atmosphere on the photoluminescence properties of nc-Si rich SiO2 films

“…2 and not shown. Comparing with the Raman spectrum from a pure silicon substrate, the energy peak at 518.4 cm À1 suggests the existence of nc-Si [12,13], which is in good agreement with the TEM image. We cannot estimate the average nanocrystal size directly from the Raman spectrum because the stress would also contribute to the Raman shift [14,15].…”

Nanocrystal and interface defects related photoluminescence in silicon-rich Al2O3 films

“…For the as-deposited sample, two broad Raman emission bands can be seen with the center located at 150 and 470 cm À1 , respectively, which are originated from amorphous silicon. After annealing, a narrower and higher energy peak centered at 515.9 cm À1 is observed, indicating the formation of nanocrystalline silicon [13,14]. Unlike the silicon clusters in SRSO system, which usually contain amorphous silicon, the narrow Raman peak implies that the nanoclusters in SRA are well crystallized.…”