Subnanosecond tunable distributed Bragg reflector lasers with an electrooptical Bragg section

Delorme, F.; Slempkès, S.; Ramdane, A.; Rose, B.; Nakajima, Kensuke

doi:10.1109/2944.401221

Cited by 13 publications

(5 citation statements)

References 8 publications

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“…The authors measured a 4 GHz bandwidth, with 38.75 GHz/V modulation efficiency. A similar device was reported by [111,112], which used the Franz-Keldysh effect to tune the Bragg section. The linewidth was less than 10 MHz over the tuning range.…”

Section: Dbr Lasersmentioning

confidence: 96%

Linear, Low Noise Microwave Photonic Systems using Phase and Frequency Modulation

Wyrwas¹

2012

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Public reporting burden for the collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden, to Washington Headquarters Services, Directorate for Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to a penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. All rights reserved.Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. To copy otherwise, to republish, to post on servers or to redistribute to lists, requires prior specific permission. Photonic systems that transmit and process microwave-frequency analog signals have traditionally been encumbered by relatively large signal distortion and noise. Optical phase modulation (PM) and frequency modulation (FM) are promising techniques that can improve system performance. In this dissertation, I discuss an optical filtering approach to demodulation of PM and FM signals, which does not rely on high frequency electronics, and which scales in linearity with increasing photonic integration. I present an analytical model, filter designs and simulations, and experimental results using planar lightwave circuit (PLC) filters and FM distributed Bragg reflector (DBR) lasers. The linearity of the PM and FM photonic links exceed that of the current state-of-the-art.

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Section: Dbr Lasersmentioning

confidence: 96%

Linear, Low Noise Microwave Photonic Systems using Phase and Frequency Modulation

Wyrwas¹

2012

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“…This resulted in ∼15 kΩ resistance between neighboring p-contacts with the gain section unbiased. Higher contact resistance is possible by using ion implantation [15]. Neither of the facets was antireflection (AR) coated for the results presented in this paper.…”

Section: Device Fabricationmentioning

confidence: 98%

“…Wavelength tuning based on the FK effect has been demonstrated within 500 ps across 2.5 nm wavelength range, in a buttjointed structure realized by selective area epitaxy regrowth [15]. Although an improved design utilizing a superstructure grating was proposed to increase the tuning range, the low refractive index changes induced by the FK effect (in bulk material) ultimately limit the tuning range to ∼11 nm [16].…”

Section: Introductionmentioning

confidence: 99%

Fast Tuneable InGaAsP DBR Laser Using Quantum-Confined Stark-Effect-Induced Refractive Index Change

Pantouvaki

Renaud

Cannard

et al. 2007

IEEE J. Select. Topics Quantum Electron.

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Abstract-We report a monolithically integrated InGaAsP DBR ridge waveguide laser that uses the quantum-confined Stark effect (QCSE) to achieve fast tuning response. The laser incorporates three sections: a forward-biased gain section, a reverse-biased phase section, and a reverse-biased DBR tuning section. The laser behavior is modeled using transmission matrix equations and tuning over ∼8 nm is predicted. Devices were fabricated using postgrowth shallow ion implantation to reduce the loss in the phase and DBR sections by quantum well intermixing. The lasing wavelength was measured while varying the reverse bias of the phase and DBR sections in the range 0 V to <−2.5 V. Tuning was noncontinuous over a ∼7-nm-wavelength range, with a side-mode suppression ratio of ∼20 dB. Coupled cavity effects due to the fabrication method used introduced discontinuities in tuning. The frequency modulation (FM) response was measured to be uniform within ±2 dB over the frequency range 10 MHz to 10 GHz, indicating that tuning times of 100 ps are possible.Index Terms-Integrated optics, ion implantation, laser tuning, quantum-confined Stark effect (QCSE), quantum well intermixing (QWI), tuneable semiconductor lasers.

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“…The results can also be applied to other tunable laser diodes which employ carrier injection for tuning the emission wavelength. Other approaches use the Franz-Keldysh effect or the quantum confined Stark effect for tuning the refractive index [2]. This leads to faster tuning, while tuning via carrier injection gives a larger tuning range.…”

Section: Introductionmentioning

confidence: 99%

Tunable laser diodes with type II superlattice in the tuning region

Neber

Amann

1998

Semicond. Sci. Technol.

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Type II superlattices as tuning regions in continuously tunable laser diodes are investigated. They are used to create an artificial indirect semiconductor by spatially separating electrons and holes from each other. At a given current the mean electron density is increased and therefore a larger tuning range and efficiency are achieved. The type II superlattice can be prepared in different ways, e.g. by a superlattice consisting of two different semiconductors, by a doping superlattice, by alternately strained layers or by combining these effects. In the case of a tuning region with 1.3 µm bandgap wavelength lattice matched to an InP substrate, one may use an unstrained InGaAsP/InGaAsSb superlattice with an estimated band offset of 302 meV. This enhances the tuning by a factor of 160 in the low-current limit. At high tuning currents this factor decreases, but it is still considerable.

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Subnanosecond tunable distributed Bragg reflector lasers with an electrooptical Bragg section

Cited by 13 publications

References 8 publications

Linear, Low Noise Microwave Photonic Systems using Phase and Frequency Modulation

Linear, Low Noise Microwave Photonic Systems using Phase and Frequency Modulation

Fast Tuneable InGaAsP DBR Laser Using Quantum-Confined Stark-Effect-Induced Refractive Index Change

Tunable laser diodes with type II superlattice in the tuning region

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