Submonolayer Quantum Dots

Owschimikow, Nina; Herzog, Bastian; Lingnau, Benjamin; Lüdge, Kathy; Lenz, Andreas; Eisele, H.; Dähne, M.; Niermann, Tore; Lehmann, Michael; Schliwa, A.; Strittmatter, A.; Pohl, Udo W.

doi:10.1007/978-3-030-35656-9_2

Cited by 4 publications

(4 citation statements)

References 60 publications

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“…Future information technologies will have to rely on dedicated components that make full use of the quantum technologies. While QDs from III–V compounds were identified as being nearly ideal in that sense, complications arise with integrating those with current mature Si technology 10 . One of the main problems is the sizeable lattice offset between QD semiconductor materials and Si.…”

Section: Discussion Of Selected Topicsmentioning

confidence: 99%

“… For the last 20 years 1 , 6 , InAs/GaAs QDs have been the focus of comprehensive research, leading to the development of quantum dot lasers 7 and single-photon emitters 2 , 8 . To increase QD density and improve carrier dynamics, submonolayer quantum dots (SML QDs) were developed as an complementary approach for QD formation 9 , 10 : Deposition of fewer than one monolayer (ML) of InAs on GaAs, followed by a small spacer layer of GaAs, is repeated multiple times to form a submonolayer stack. In this paper, we discuss how Sb, as a further atomic species, affects the optical and electronic properties of InAs/GaAs submonolayer stacks.…”

Section: Introductionmentioning

confidence: 99%

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Modeling electronic and optical properties of III–V quantum dots—selected recent developments

2022

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Electronic properties of selected quantum dot (QD) systems are surveyed based on the multi-band k·p method, which we benchmark by direct comparison to the empirical tight-binding algorithm, and we also discuss the newly developed “linear combination of quantum dot orbitals” method. Furthermore, we focus on two major complexes: First, the role of antimony incorporation in InGaAs/GaAs submonolayer QDs and In1−xGax AsySb1−y/GaP QDs, and second, the theory of QD-based quantum cascade lasers and the related prospect of room temperature lasing.

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Section: Discussion Of Selected Topicsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Modeling electronic and optical properties of III–V quantum dots—selected recent developments

2022

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“…The amplitude-phase coupling, including the role of the inactive states, is approximated by a constant large α-factor. This also results from the lateral coupling and the size of the inactive reservoir leading to a higher phase-response compared to conventional quantum dots [44,49]. Another critical aspect to take into account are the differing relaxation rates of bulk and SMLQD section in the gain.…”

Section: Theoretical Modelmentioning

confidence: 99%

“…In order to further investigate the generality of this feedback effect in terms of the choice of the gain medium, we utilize a laser diode based on submonolayer quantum dots (SMLQDs) [40,41]. These 0D localization centers have higher areal density than conventional quantum dots [1,42,43], and therefore provide a higher gain per unit length [44]. Furthermore, these structures exhibit a strong amplitude-phase coupling, i.e.…”

Section: Introductionmentioning

confidence: 99%

Feedback induced locking in semiconductor lasers with strong amplitude-phase coupling

Hausen,

Herzog,

Nelde

et al. 2021

Preprint

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The influence of optical feedback on semiconductor lasers has been a widely studied field of research due to fundamental interests as well as the optimization of optical data transmission and computing. Recent publications have shown that it is possible to induce a periodic pulsed like output in quantum-dot and quantum-well laser diodes utilizing the locking of the external cavity modes and the relaxation oscillation frequency. We present an in-depth analysis of this effect. We choose submonolayer quantum dots as a gain system, as these provide a relatively strong amplitude-phase coupling, which has proven to be very beneficial for these locking effects to occur. Introducing a new theoretical model we can correctly reproduce the essential features of the gain system and validate them by comparison to our experimental results. From this starting point we can further explore how the staircase behaviour of the oscillation frequency with increasing pump current can be influenced by changing various laser parameters. The staircase behavior is induced by a reordering of the Hopf bifurcations giving birth to the regular pulsed-like oscillations.

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Effect of the number of stacks on the 2D to 3D transition of stacked submonolayer (SML) InAs nanostructures

Roca

Kamiya²

2022

Journal of Crystal Growth

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Submonolayer Quantum Dots

Cited by 4 publications

References 60 publications

Modeling electronic and optical properties of III–V quantum dots—selected recent developments

Modeling electronic and optical properties of III–V quantum dots—selected recent developments

Feedback induced locking in semiconductor lasers with strong amplitude-phase coupling

Effect of the number of stacks on the 2D to 3D transition of stacked submonolayer (SML) InAs nanostructures

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