DOI: 10.1109/isscc.1979.1155911
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Abstract: IT IS WELL KNOWN that the current technological improvements of HMOs', DMOS' and VMOS3 will tend t o shift the emphasis of technology t o very high performance of switching speed, high frequency operation, low power dissipation and fine patterning.To obtain higher performance MOS integrated circuits associated with a short channel, high speed and high packing density, a submicron channel MOS (SMOS) IC technology approach will be reported. Some basic processing, parameters and performances, such as gate thresh…

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