Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons

Brandt, O.; Pfüller, Carsten; Chèze, Caroline; Geelhaar, Lutz; Riechert, H.

doi:10.1103/physrevb.81.045302

Cited by 113 publications

(147 citation statements)

References 54 publications

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“…Third, when a donor resides close to the surface, the binding energy of the associated excitonic complex (D 0 ,X) s is reduced [10,11] and its transition energy is increased, as discussed in detail in Ref. [6]. The reduction of binding energy persists also in the presence of a dielectric mismatch, which now becomes important, independent of the actual dimensions of the NW [11].…”

Section: Resultsmentioning

confidence: 84%

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Statistical analysis of excitonic transitions in single, free-standing GaN nanowires: Probing impurity incorporation in the poissonian limit

et al. 2010

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Single, free-standing GaN nanowires grown by plasma-assisted molecular-beam epitaxy have been investigated with low temperature micro-photoluminescence. The quantitative analysis of the luminescence spectra of around 100 nanowires revealed that each nanowire exhibits its own individual spectrum. A significant fraction of nanowires exclusively emits at energies corresponding to either surface-donor-bound or free excitons, demonstrating that optical properties of individual nanowires are determined by a few impurity atoms alone. The number of impurities per nanowire and their location within the nanowires varies according to Poissonian statistics.

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Section: Resultsmentioning

confidence: 84%

“…In other words, the NWs are fabricated under conditions of maximum cleanliness and exceptionally high uniformity. Based on our previous work [6], we estimate the absolute upper limit for the concentration of unintentional donors to be less than 5 × 10 16 cm -3 .…”

Section: Methodsmentioning

confidence: 99%

Statistical analysis of excitonic transitions in single, free-standing GaN nanowires: Probing impurity incorporation in the poissonian limit

et al. 2010

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“…108 For single nanorods, excitonic transitions with linewidths below 300 leV were observed at 3.4749 eV or higher energy, clearly above the donor-bound exciton in the bulk. They proved that these transitions are due to donor bound excitons close to the surface.…”

Section: Structural and Surfaced Related Optical And Electrical Pmentioning

confidence: 99%

“…The broadening of about 3 meV was observed for the nanorod ensemble, which is shown to be a natural consequence of the energy dispersion of bound-exciton states with varying their distance from the surface. 108 It is known from other semiconductor nanorods, for example ZnO, 109 that band bending due to surface Fermi level pinning causes a surface depletion layer, as plotted in Fig. 22 reprinted with permission from Ref.…”

Section: Structural and Surfaced Related Optical And Electrical Pmentioning

confidence: 99%

GaN based nanorods for solid state lighting

Li¹,

Waag

2012

Journal of Applied Physics

491

394

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In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

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“…[23][24][25] The increased strain caused by the coalescence has a significant impact on the optical properties of the nanorod LEDs: as reported by several groups the PL peaks broaden greatly with increasing fill factor. 19,[26][27][28] Furthermore, additional peaks associated with basal stacking faults 25,29 and threading dislocations 30 only begin to appear above a certain fill factor. To overcome these issues a new two-step top down/bottom up method has started to be used for high crystal quality GaN nanorods.…”

Section: Introductionmentioning

confidence: 99%

Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods

Conroy¹,

Kusch

et al. 2016

Nanoscale

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We report a method of growing site controlled InGaN multiple quantum discs (QDs) at uniform wafer scale on coalescence free ultra-high density (>80%) nanorod templates by metal organic chemical vapour deposition (MOCVD). The dislocation and coalescence free nature of the GaN space filling nanorod arrays eliminates the well-known emission problems seen in InGaN based visible light sources that these types of crystallographic defects cause. Correlative scanning transmission electron microscopy (STEM), energy-dispersive X-ray (EDX) mapping and cathodoluminescence (CL) hyperspectral imaging illustrates the controlled site selection of the red, yellow and green (RYG) emission at these nano tips. This article reveals that the nanorod tips' broad emission in the RYG visible range is in fact achieved by manipulating the InGaN QD's confinement dimensions, rather than significantly increasing the In%. This article details the easily controlled method of manipulating the QDs dimensions producing high crystal quality InGaN without complicated growth conditions needed for strain relaxation and alloy compositional changes seen for bulk planar GaN templates

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Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons

Cited by 113 publications

References 54 publications

Statistical analysis of excitonic transitions in single, free-standing GaN nanowires: Probing impurity incorporation in the poissonian limit

Statistical analysis of excitonic transitions in single, free-standing GaN nanowires: Probing impurity incorporation in the poissonian limit

GaN based nanorods for solid state lighting

Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods

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