Sub-10-nm nanogap fabrication by silicidation

Abstract

We developed a simple and reliable method for the fabrication of sub-10-nm wide nanogaps. The self-formed nanogap is based on the stoichiometric solid-state reaction between metal and Si atoms during silicidation. The nanogap width is determined by the metal layer thickness. Our proposed method provides nanogaps with either symmetric or asymmetric electrodes, as well as multiple nanogaps within one unique process step. Therefore, this method allows for high throughput and large-scale production.X. Tang is with

Novel Self-shrinking Mask for Sub-3 nm Pattern Fabrication

“…Because of the rapid evolution of nanosensors, nanophotonics, and semiconductor technology down to the sub-10 nm technology node, the research of sub-10 nm patterning has attracted much attention in recent years 1 2 3 4 5 6 . For instance, sub-10 nm electromagnetic hot spots with extreme near-field confinement are crucial to plasmonic applications 6 7 8 .…”