Study on the Simulation of Biosensors Based on Stacked Source Trench Gate TFET

Abstract

In order to detect biomolecules, a biosensor based on a dielectric-modulated stacked source trench gate tunnel field effect transistor (DM-SSTGTFET) is proposed. The stacked source structure can simultaneously make the on-state current higher and the off-state current lower. The trench gate structure will increase the tunneling area and tunneling probability. Technology computer-aided design (TCAD) is used for the sensitivity study of the proposed structured biosensor. The results show that the current sensitivity of the DM-SSTGTFET biosensor can be as high as 108, the threshold voltage sensitivity can reach 0.46 V and the subthreshold swing sensitivity can reach 0.8. As a result of its high sensitivity and low power consumption, the proposed biosensor has highly promising prospects.

Gate electrode stacked source/drain SON trench MOSFET for biosensing application

“…As the implementaion of higher gate workfunction near to the source end offers an improve sensitivity for which the metal workfunction of M1 = 4.7 eV, and M2 = 4.1 eV are being considered in the gate region [35,37]. Again the specification of the stack source/drain formed by silicon and germanium material is taken as reported in [40].…”

“…Similarly different fabrication methods like fully silicide (FUSI), inter diffusion and tilt angle evaporation (TAE) process have been discussed for realization of gate engineering techniques [55,56]. Hence the fabrication of SiGe-DMTG SON MOSFET biosensor may be carried out by implementing the possible fabrication steps that have been already reported in [23,40,56]. The fabrication process flow and corresponding block diagrams are presented in figure 3.…”

“…Thus silicon-on-nothing (SON) concept is exploited to enhance the device performance and to provide an opening for further device miniaturization [38,39]. Many researchers have been working related to the heterogeneous integration of Si on Ge, and developing a suitable gate stack for achieving low resistance ohmic contacts on n-type Ge for improving the device performance [40][41][42][43].…”

Silicon-Germanium Sourced Dopingless Nanowire Tunnel Field Effect Transistor Based Oxygen Gas Sensor with Improved Sensitivity

“…Apart from these, TFETs can be used as biosensors, considering various structures like SiGe sourced TFET, dual-channel trench gate TFET, and hetero gate dielectric TFET. However, these structures' low sensitivity and high fabrication complexity restrict them from being used as commercially accepted biosensor models [11][12][13][14][15]. A low bandgap material, Si0.5Ge0.5, is used in the source region, which helps enhance the tunnelling current in SiGe-CP-NW-TFET [16][17].…”

Performance optimization of AlGaAs and Al x Ga 1−x As based SM-TM-DG-JL-TFET for an analog/RF applications

“…To reduce the ambipolar nature of the devices, gate-drain overlap and Gaussian doping approaches might be utilized [5,6]. The ambipolar nature of the device construction might hurt the performance of the Radio-Frequency (RF) system.…”