DOI: 10.4028/www.scientific.net/kem.416.66
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Abstract: In order to better understand the grinding mechanism, the rough, semi-fine and fine ground silicon wafer subsurface damage models are experimentally investigated with the aid of advanced measurement methods. The results show that the rough ground wafer subsurface damage model is composed of large quantity of microcracks with complicated configurations, high density dislocations, stalk faults and elastic deformation layer. Among them microcracks, dislocations and stalk faults are dominant. Apart from the above …

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