Study on photoelectricity properties of SiCN thin films prepared by magnetron sputtering

Enhanced Wettability, Hardness, and Tunable Optical Properties of SiCxNy Coatings Formed by Reactive Magnetron Sputtering

“… Growth rate dependence on MS mode and type of sputtered target. Hänninen T., et al, 2018 [ 4 ]; Pettersson M., et al, 2013 [ 5 ]; Kozak A.O., et al, 2017 [ 8 ]; Kulikovsky V., et al, 2014 [ 10 ]; Berlind T., et al, 2001 [ 12 ]; Bachar A., et al, 2018 [ 18 ]; Peng Y., et al, 2011 [ 19 ]; Saito N., et al, 1991 [ 20 ]; Li Q., et al, 2017 [ 21 ]; Sundaram K.B., et al, 2020 [ 22 ]; Li Q.et al, 2021 [ 23 ]; Hüger, E., et al, 2012 [ 25 ]; Peng Y., et al, 2018 [ 27 ]; Peng Y., et al, 2018 [ 28 ]; Peng Y., et al, 2014 [ 29 ]; Medeiros H.S., et al, 2011 [ 30 ]; Peng, Y., et al, 2010 [ 31 ]; Bhattacharyya A.S., et al, 2009 [ 32 ]; Bhattacharyya A.S., et al, 2009 [ 33 ]; Fraga M.A., et al, 2008 [ 34 ]; Mishra S.K., et al, 2007 [ 35 ]; Du X.-W., et al, 2007 [ 36 ]; Wei J., et al, 2000 [ 37 ]; Xiao X., et al, 2000 [ 38 ]; Lutz H, et al, 1998 [ 39 ]; Scharf T.W., et al, 1997 [ 40 ]. …”

“…Owing to their multifaceted properties, silicon carbonitrides SiC x N y [ 1 , 2 , 3 ] are modern multifunctional materials with a wide range of applications. SiC x N y exhibits a combination of tribo-mechanical (high hardness [ 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 ], wear resistance [ 6 , 7 ], low coefficient of friction [ 6 ], high adhesion to construction materials [ 6 ]), chemical (high thermal and corrosion resistance [ 1 , 7 , 10 ]), and physical (low dielectric constant [ 1 ], controlled in a wide range of values of refractive index [ 18 ] and optical band gap [ 18 , 19 , 20 , 21 ], high optical transparency in a wide spectral range [ 19 , 21 , 22 , 23 ], high hydrophobicity [ 24 ]) properties. Due to the variable composition of the compound, it is possible to change the values of the conductivity, the hardness, and Young’s modulus.…”

“…SiC, Si, and C (graphite) are most often used as targets in magnetron sputtering experiments. Some studies have been carried out with Si 3 N 4 [ 23 ] and segmented Si+C targets [ 25 , 26 ]. The power applied to the targets in conventional RF and DC MS processes varies over a wide range of 80 to 600 W, while, in the HiPIMS process, it is much higher (up to 1400 W).…”

“…As follows from the literature, most of the films were obtained at room temperature (RT). There is a very limited number of works in which the authors have used elevated deposition temperatures of up to 700 °C [ 23 ]. Different authors used different experimental setups, target materials, target–substrate distances, levels of applied power, reactor chamber geometries, reactive gases, and flow rates; therefore, all of the above leads not only to difficulties in comparison, but to the potential for the comparison of results not to be scientifically perfect.…”

Геометрическая форма областей разрушения в ходе скользящей наноиндентации тонких пленок Si-C-N, применяемых для Н/МЭМС

“…нагружения, а также величина напряжения в тонких пленках[1].Популярность тонких пленок Si−C−N объясняется их устойчивостью к окислению, химической инертностью, пьезоэлектрическими свойствами и способностью поглощать СВЧ-излучение. Эти пленки все более широко применяются в системах Н/МЭМС, в запоминающих устройствах, при компоновке электронных схем, в оптоэлектронных устройствах и в СВЧ-поглотителях[2][3][4][5][6][7][8][9][10][11]. В пленках Si−C−N образуются нанокристаллические фазы SiC, Si 3 N 4 и CN x[12].Исследование методом скользящей индентации, или склерометрическое испытание, проводилось с помощью индентора Берковича, входящего в состав наноинден-Энергодисперсионные спектры области царапины (а) и области с покрытием (b).тационного оборудования MTS (США).…”