Study of the Reaction of Si2 H 6 in the Presence of  C 2 H 2 in Synthesis of SiC Films by LPCVD Using a Macro/microcavity Method

Abstract

Silicon carbide (SIC) films were synthesized by low-pressure chemical vapor deposition using Si2H6 and C2H2 as the reactant gases at 873 K and 3.3 Torr total pressure. The film-formation mechanism was studied by the "macro/microcavity method' which determines the kinetics of the reaction and the sticking probability of the film-forming species, simultaneously. The reaction of Si2H6 in the presence of C2H2 occurred both on the surface of the substrate and in the gas phase. The surface reaction of Si2H6 was retarded strongly by the addition of C2H2 while the gas:phase reaction was not. Th~ film forming species included (i) Si2H~, directly depositing on the substrate with a sticking probability of 5 • 10-6; (it) Sill2, an initial product of the gas-phase decomposition of Si2H6, diffusing to the wall and reacting with a sticking probability of 1;and (iii) a Si and C containing intermediate, most plausibly, SiH3C~-CH, produced by the gas-phase reaction of Sill2 with C2H2, depositing on the substrate with a sticking probability of 0.1. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 129.49.23.145 Downloaded on 2015-03-16 to IP ABSTRACTMetal contamination levels are a growing concern in integrated circuit manufacturing because they degrade electrical performance. This work uses statistical design of experiments to determine deposition characteristics of metal contaminants onto silicon surfaces from process chemicals that are used in wafer cleaning. Copper, gold, molybdenum, silver, lead, chromium, tin, titanium, manganese, and tungsten were added to buffered oxide etchant and HF solutions. Wafers were immersed in these solutions and evaluated by total reflectance x-ray fluorescence spectroscopy surface analysis. Most contaminant deposition characteristics are simple, dependent on bath type and contamination level alone. Some contaminant deposition characteristics are complex, dependent on multifactors including bath type, contaminant level, and the presence of other contaminants as well.

Silicon Carbide Membranes Modified by Chemical Vapor Deposition Using Species of Low Sticking Coefficients in a Silane/Acetylene Reaction System

“…The sticking coefficients of SiH 4 at 900°and 800°C are 5.8 × 10 −5 and 7.7 × 10 −6 , respectively. These two values are two orders of magnitude lower than the sticking coefficients of SiH 4 in depositing silicon, as reported by Buss et al 23 The sticking coefficient at 800°C is only slightly higher than that of disilane in depositing SiC at 600°C, which was 5.1 × 10 −6 , as reported by Hong et al 21 Figures 8(a) and (b) reveal the thickness profiles in the MMC. The film thickness descends very rapidly from the entrance and levels off in the interior of the MMC.…”

“…The gas-phase reaction constant and the surface reaction constant were determined by varying the volume:surface (V/S) ratio of the deposition environment. The V/S ratio was varied by changing the spacing of a multilayer macrocavity (MMC) 21 or the diameter of a reactor tube. The V/S ratio of a macrocavity is one half of its spacing, and that of a reactor tube is one quarter of its diameter.…”

A Quantum Chemical Exploration of SiC Chemical Vapor Deposition

“…Due to necessity surface models for CFD in the literature usually combine experimental results carried out under different conditions than the CVD [58][59][60][61][62][63] . Computational studies on adsorptions on SiC surfaces are also rare and unsystematic [64][65][66][67][68][69][70] .…”

Chemical Vapor Deposition Pt-Ni alloy Using Pt(PF3)4 and Ni(PF3)4

“…20x20 mm Si wafers were assembled to form macrocavity by inserting spacers (0.7mm). Deposition profile in the macrocavity was analyzed by using the diffusion model [7][8]. In the macrocavity, mean free path of the reactant under our operate pressure is short enough to ignore the chemical reactions in the gas phase, we can assume that source gases mainly decompose at the surface of the substrate.…”