Study of Super-Resolution Read-Only-Memory Disk with a Semiconducting or Chalcogenide Mask Layer

Pilard, Gaël; Féry, C.; Pacearescu, Larisa; Hoelzemann, Herbert; Knappmann, S.

doi:10.1143/jjap.48.03a064

Cited by 9 publications

(5 citation statements)

References 9 publications

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“…Ideal readout condition for Super-RENS disc has been experimentally verified. 14) Considering a readout speed of 2.6 m/s and the InSb response time (time necessary for the permittivity to locally change) of around 40 ns, 16) a displacement of approximately 100 nm is found, which is in agreement with our predictions.…”

Section: Dynamic Threshold Modelsupporting

confidence: 89%

“…13,14) In contrast to the phase-change materials, a reversible sub-wavelength optical scatterer is generated in the InSb layer upon laser radiation. 15,16) The physical mechanism behind the scatterer generation, which in practice is a localized increase of the extinction coefficient, is believed to be due to the decrease of the band gap energy E g as function of the temperature, associated with the crystalline-to-molten phase transition. 17) It has been also proposed that photogeneration of free carriers in the InSb layer may be playing a role in the change of the permitivitty function.…”

Section: Introductionmentioning

confidence: 99%

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Influence of the Numerical Aperture on the Superresolved InSb Focused Spot

Assafrao

Wachters

Pereira

et al. 2012

Jpn. J. Appl. Phys.

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A detailed study on the influence of the focusing lens numerical aperture on the InSb super resolved spot is presented. The super resolution effect is described using the threshold model, where the material permittivity locally changes under laser exposure, being rigorously simulated in a finite element method program. The superresolved InSb focused spot is investigated for a wide range focusing lenses systems, from high to low numerical apertures. An extension of the model to account for disc motion is discussed. Such dynamic super-resolution near-field structure (Super-RENS) threshold model is suitable for readout signal analysis when combined with a “quasi-scalar” readout program, also described. Interesting properties of the InSb Super-RENS focused spot, such as sub-diffraction limited spot size and the general conditions to achieve it, are shown. An analysis on the Super-RENS readout signal is also given, with useful applications in optical data storage. Thus, this work greatly helps in understanding the InSb scatterer type of Super-RENS effect for optical data storage and other super resolution applications.

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Section: Dynamic Threshold Modelsupporting

confidence: 89%

Section: Introductionmentioning

confidence: 99%

Influence of the Numerical Aperture on the Superresolved InSb Focused Spot

Assafrao

Wachters

Pereira

et al. 2012

Jpn. J. Appl. Phys.

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“…3b. [20]- [23] In our model we assume that the phase change occurs instantaneously. The super resolution effect is then incorporated into the focused beam by a routine that searches the intensity values in the field distribution which are above or below a given threshold.…”

Section: Scalar Threshold Model For Srensmentioning

confidence: 99%

Scalar Readout Model for the Super-Rens Focused Spot

Assafrao¹,

Pereira²,

Urbach³

2011

J. Eur. Opt. Soc.-Rapid Publ.

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A scalar readout model is presented to investigate the readout characteristics of the super resolution near field disc. The super resolution effect is described by means of a threshold model, where the super resolution material imparts a phase change on the focused spot if the laser density energy is high enough to trigger the SRens effect. This approach results in a very fast way of computing the basic characteristics of the SRens readout signal, being suitable for large investigations. Moreover, many simulation results have been experimentally confirmed by other groups, which further validates the model. Thus, this simplified model is an useful tool for a better comprehension of the readout signal of the super resolution effect in optical data storage and other super resolution applications.

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“…For the semiconductor InSb, the increase of the extinction coefficient is believed to be due to the decrease of the band gap energy E g as function of the temperature, as demonstrated by Ohkubo et al [12]. Hence, the Super-RENS technique is a very active field that has attracted many researchers, due to its advantages over other near field techniques [13][14][15][16][17]. From a practical point of view, it is essential to understand the effect of the opened optical aperture/scatterer on the profile and intensity of the focused laser spot, regardless of its cause.…”

Section: Introductionmentioning

confidence: 99%

Direct measurement of the near-field super resolved focused spot in InSb

Assafrao¹,

Wachters²,

Verheijen³

et al. 2012

Opt. Express

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Under appropriate laser exposure, a thin film of InSb exhibits a sub-wavelength thermally modified area that can be used to focus light beyond the diffraction limit. This technique, called Super-Resolution Near-Field Structure, is a potential candidate for ultrahigh density optical data storage and many other high-resolution applications. We combined near field microscopy, confocal microscopy and time resolved pump-probe technique to directly measure the induced sub-diffraction limited spot in the near-field regime. The measured spot size was found to be dependent on the laser power and a decrease of 25% (100nm) was observed. Experimental evidences that support a threshold-like simulation model to describe the effect are also provided. The experimental data are in excellent agreement with rigorous simulations obtained with a three dimensional Finite Element Method code.

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Study of Super-Resolution Read-Only-Memory Disk with a Semiconducting or Chalcogenide Mask Layer

Cited by 9 publications

References 9 publications

Influence of the Numerical Aperture on the Superresolved InSb Focused Spot

Influence of the Numerical Aperture on the Superresolved InSb Focused Spot

Scalar Readout Model for the Super-Rens Focused Spot

Direct measurement of the near-field super resolved focused spot in InSb

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