Study of SiNx and SiO2 passivation of GaN surfaces

Abstract

Articles you may be interested inStudy of surface leakage current of AlGaN/GaN high electron mobility transistors Appl. Phys. Lett.

GaN Nanowire Carrier Concentration Calculated from Light and Dark Resistance Measurements

“…We ran the routine several times, varying surface band bending in the dark from 0.3 V to 0.7 V and surface band bending under illumination from 0 V to 0.05 V. The actual surface band bending for our GaN nanowires is unknown. For nanowire devices measured in the dark, we chose values within the literature range of 0.1 V to 1.1 V. [28][29][30] Surface band bending for illuminated nanowires was much lower. The intention was to reduce the surface band bending to 0 V, but since this could not be confirmed, a range of low values was used.…”

Discussion on electrical characteristics of i-In0.13Ga0.87N p-i-n photovoltaics by using a single/multi-antireflection layer

“…Compared with Device-A, the leakage currents of the PVs with a SARL and a MARL was improved by 39.3% and 95.7%, respectively. Device-C had the lowest leakage current, which may be attributed to the reduction of surface and edge leakage paths due to the MARL (as a passivation layer) and the surface and edge recombination improvement [14][15][16][17]. Because the forward current relies on the amount of recombination in a p-n junction, increasing the recombination increases the forward bias current.…”

“…The fill factor of PVs with a SARL and a MARL improved by 33.3% and 54.5%, respectively, because the ARL can be used as the passivation layer. The passivation layer mainly reduces recombination at edge, front and back surface areas [16,17]. Recombination centers with high recombination rates are usually close to the junction (usually a surface or a grain boundary), which will allow carriers to move to this recombination source very quickly and recombine, thus dramatically increasing the recombination current.…”

Electrical and Optical Characterization of AlGaN/GaN HEMTs with In Situ and Ex Situ Deposited SiN x Layers

“…Chevtchenko et al have demonstrated reduced reverse leakage current in GaN Schottky diodes passivated ex situ by SiN x or SiO 2 . 10 SiN x layers grown in the III-N metalorganic chemical vapor deposition (MOCVD) chamber (in situ growth) have also been shown to reduce threading dislocation (TD) density when inserted prior to GaN growth. 11,12 Recently, in situ SiN x growth immediately following AlGaN/GaN growth has been demonstrated as well.…”